Allicdata Part #: | 497-13161-ND |
Manufacturer Part#: |
STFI15N65M5 |
Price: | $ 2.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 650V 11A I2PAKFP |
More Detail: | N-Channel 650V 11A (Tc) 30W (Tc) Through Hole I2PA... |
DataSheet: | STFI15N65M5 Datasheet/PDF |
Quantity: | 1396 |
1 +: | $ 1.95300 |
10 +: | $ 1.76463 |
100 +: | $ 1.41819 |
500 +: | $ 1.10305 |
1000 +: | $ 0.91396 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 816pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 340 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STFI15N65M5 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET). It is used in many markets and products, ranging from high current power supplies to motor control and switchgear. Its applications include high-power switching, motor speed regulation, and load switching. This article will discuss the application fields and working principles of the STFI15N65M5.
Application Fields
The STFI15N65M5 is a high-power, high-efficiency MOSFET with an operating voltage of up to 600V. As such, it is suitable for applications including high current power supplies, motor control, and switchgear. It is also used in products such as air conditioners, refrigerators, and LED-lighting applications. The device offers a high level of reliability and is highly efficient due to its low on-resistance and threshold voltage. The high current-carrying capacity and low gate-charge makes the device ideal for applications that require high power and low switching losses.
Working Principle
The STFI15N65M5 functions as an N-Channel metal oxide semiconductor field-effect transistor (MOSFET). It is comprised of a metal oxide semiconductor layer and a control terminal (the gate) that is insulated from the other two terminals. The working principle is based on the depletion of mobile charges from the semiconductor layer, allowing the transistor to be either on or off. When the gate voltage is low, negative charges in the semiconductor layer block current flow, thus turning the device off. When the gate voltage is high, the charges are depleted and currents are allowed to flow through the semiconductor layer, thus turning the device on.
In addition, the STFI15N65M5 is designed to be able to handle large transient voltages and currents, thanks to its high body-diode rating and its high speed pulse-handling capability. This allows the device to be used in applications that require high-speed switching and that require a high tolerance to transient voltages.
Conclusion
The STFI15N65M5 is a power-efficient, high-performance MOSFET that is suitable for high-power switching applications, motor speed regulation, load switching, and more. Its applications include high current power supplies, motor control, and switchgear. The device is designed to be able to handle high transient voltages and currents, and is highly efficient due to its low on-resistance and threshold voltage. Thanks to its high body-diode rating and pulse-handling capability, the device is able to withstand high-speed switching and to tolerate transient voltages.
The specific data is subject to PDF, and the above content is for reference
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