Allicdata Part #: | STFI14N80K5-ND |
Manufacturer Part#: |
STFI14N80K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 12A I2PAKFP |
More Detail: | N-Channel 800V 12A (Tc) 30W (Tc) Through Hole I2PA... |
DataSheet: | STFI14N80K5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-262-3 Full Pack, I²Pak |
Supplier Device Package: | I2PAKFP (TO-281) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 445 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STFI14N80K5 is a high-performance, low-on-resistance, N-channel enhanced mode vertical DMOS FET (Field Effect Transistor) with very low gate charge and high transition frequency. It is designed for use in various applications such as switching mode power supply (SMPS) regulator, inverter, motor control, solenoid/actuator and relay control. The FET is also suitable for automotive, industrial and consumer applications such as lighting, charger and adapter.
This FET is a single, enhancement-mode vertical DMOS FET with an N-channel and normally-on operation. The device features an enhanced gate oxide layer for improved performance, low gate charge and threshold voltage, low output capacitance, and good reverse body diode definition for improved efficiency. It has a low-on resistance of 0.014ohm and maximum drain current of 12A. The device also has a maximum junction temperature of 175°C, and available in a low-profile SOT-223 package.
The STFI14N80K5 offers excellent switching performance and is suitable for high-speed switching and low-loss operation. It has a drain to source breakdown voltage of 700V and gate threshold voltage of -1.1V (max). The device can operate over a wide temperature range of -55°C to 175°C. The gate charge is 7nC (typical) and threshold voltage is -2.3V. Besides, the typical gate to drain capacitance of 0.66pF makes the device well suited for use with high-speed switching applications.
The working principle behind this transistor is simple. When the gate is forward biased and with a sufficiently low gate bias voltage, carriers will move from the source to the drain and the channel will be \'turned-on.\' The current flow between the source and the drain is modulated by the gate, allowing the output current to be controlled. The output current is limited by the number of carriers that can fit in the channel, and hence their mobility, and by the gate voltage. The gate voltage also causes a change in the channel width, which affects the mobility of the carriers and hence the current flow.
The STFI14N80K5 offers low-losses and high-speed switching performance and is ideal for a variety of applications. It is designed for use with switching power supplies, inverters, motor control, solenoid/actuator and relay control. It is also suitable for automotive, industrial and consumer applications such as lighting, charger and adapter, and other applications where low power loss and high-speed switching performance are required.
The specific data is subject to PDF, and the above content is for reference
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