STFI18N65M2

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The STFI18N65M2 is a type of Field-Effect Transistor (FET) designed specifically for applications that require high current output and pulse switching capabilities. The device has a low gate-threshold voltage range and a low on-resistance rating, making it ideal for use in high-current switching applications. The STFI18N65M2 is classified as a single power MOSFET. This device is capable of switching current at high frequencies with very low losses, making it suitable for use in high-speed switching applications.

Device Structure and Working Principle

The STFI18N65M2 involves a semiconductor structure with three terminals: the source, the drain, and the gate. The source and drain terminals are two sections that form a channel through which a current can flow from the drain to the source. The gate terminal controls the quantity of the current flowing through the channel, depending on the amount of voltage applied to the gate. When a low voltage is applied to the gate, the device is at an OFF state and no current can flow through the channel; when a high voltage is applied to the gate, the device is said to be at an ON state and the current flow through the channel increases.

An important parameter to consider for this device is its on-resistance rating. On-resistance is the resistance level of the device when the device is in an ON state. The STFI18N65M2 has a low on-resistance rating of 65mohm at 5V, which makes it an ideal choice for applications requiring a high current output with low voltage.

Design Benefits

The STFI18N65M2 provides a number of design benefits. Its low gate-threshold range enables the device to switch at high frequencies with very low losses. Its low on-resistance rating makes it an ideal choice for applications requiring high current output with low voltage. The device also provides a wide range of protection features for overvoltage, overload, and thermal protection.

Applications

The STFI18N65M2 is designed for applications that require high current output and pulse switching capabilities. It is suitable for use in high-power switching applications such as DC-DC Converters, Motor Control, Power Supplies, Control Automation, and Automotive Applications. The device can also be used for non-switching applications such as Linear Voltage Regulation, Load Switching, and High-Current Fault Protection.

Conclusion

The STFI18N65M2 is a type of single power MOSFET designed specifically for applications that require high current output and pulse switching capabilities. It features a low gate-threshold voltage range and a low on-resistance rating, making it suitable for use in high power switching applications and various other applications. The device also provides a wide range of protection features, making it an ideal choice for reliable operation.

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