STFI20NM65N

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The STFI20NM65N is a SuperFET™ II Power MOSFET, which combines the benefits of low RDS(on) with high avalanche energy rating and maximum operating temperature (Tj) of 150 °C.

These devices are optimized for high current applications and are suitable for high efficiency switch mode power supplies, high current DC-DC converters, and in Automotive applications. They are offered in a 20V rating that is capable of dissipating dissipation up to 20W.

In addition to high power dissipation, the STFI20NM65N also has high switching speeds for fast response in switching applications. Its superior thermal resistance and low capacitance characteristics also make it ideal for high-frequency Power Electronics designs.

The STFI20NM65N is also well suited for high current switching in high-performance motor control circuits and power supplies. It is rated for a maximum drain current of 19A, a drain-source voltage of 100V and low temperature performance.

Application Field of STFI20NM65N

The STFI20NM65N is an ideal solution for high-efficiency power switch applications such as AC-DC power supplies, DC-DC converters, secondary hard-switching converters, and automotive applications. It has fast switching speed, allowing it to be used as a high-side power switch as well as a low-side power switch. It is also suitable for high-current switching in high-performance motor control circuits, power inverters, and switch mode power supplies.

It is also well suited for high frequency switching in consumer, industrial, and telecom power supplies and AC-DC converters. The STFI20NM65N is an excellent choice for primary hard-switching in high-performance applications such as motor controllers and other motor control applications. It is also suitable for power switching in medium-voltage applications and for static switching.

Working Principle of STFI20NM65N

The STFI20NM65N is a SuperFET™ II MOSFET and is designed to handle high current, high power applications. It is constructed using an insulating oxide layer between an n-type Gate oxide and an n-type Metal Oxide Semiconductor (MOS) structure. The STFI20NM65N also includes a source terminal and a drain terminal spaced apart by a channel through which electrons are able to move freely.

The STFI20NM65N is based on a Single-Ended transistor architecture, which enables high current and high power operation. This architecture allows the device to act as both an on/off switch and a linear regulator. The device is an enhancement-mode device with a depletion-mode MOSFET, resulting in low power consumption when in the off position.

When the drain is used as the high-side switch for a direct current (DC) circuit, the STFI20NM65N will be in the on state when a positive potential of the drain-source voltage is reached. The MOSFET will then pass current from the source to the drain. When the gate voltage is negative, the device is off and no current is passed from the source to the drain.

When the drain is used as the low-side switch for the same DC circuit, the STFI20NM65N will be off when a negative potential is reached on the drain-source voltage. The MOSFET will then be in the on state and will pass current from the drain to the source when the gate voltage is positive.

The STFI20NM65N is also well suited as a linear regulator. The devicecan be used as a linear regulator by connecting the gate and the source of the device together, resulting in a fixed VDS voltage drop. This voltage drop serves as a regulated voltage for the circuit, as the voltage across the drain and source terminals are kept constant as long as the gate voltage is fixed.

In addition to its uses as an on/off switch and a linear regulator, the STFI20NM65N can be used as a low dropout regulator. By connecting the gate and source terminals of the device, the VGS voltage can be used to control the voltage drop. This can be used to create a low dropout voltage regulator, with improved efficiency and output stability.

The STFI20NM65N is an excellent choice for high current and high power applications such as AC-DC power supplies, DC-DC converters, secondary hard-switching converters, motor control circuits, and switch mode power supplies. Its rugged metal oxide structure and low RDS(on) make it an ideal solution for high-current switching applications. Its fast switching speed, high power dissipation, and low capacitance make it ideal for high-frequency Power Electronics designs.

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