STL100N1VH5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STL100N1VH5 is a high-temperature, single-gate, n-type vertical gallium nitride (GaN) metal–oxide–semiconductor field-effect transistor (MOSFET). The device operates with a threshold voltage of 1V and an on-state resistance of 0.09 ohms at an input source to drain voltage of 100mV and a junction temperature of 175°C. The device also provides superior switching performance over standard Silicon MOSFETs. It is designed for applications in high-frequency power amplification systems, such as radio frequency (RF) power amplifiers and high-voltage converters.

Compared to Si MOSFETs, GaN MOSFETs provide superior power performance, greater ruggedness, and low switching losses. In addition, they are capable of operation at much higher frequencies, temperatures, and higher power levels. The STL100N1VH5 is specifically designed to provide excellent reliability and high power performance in high-temperature applications.

The STL100N1VH5 is fabricated with vertical GaN to provide superior power performance, greater ruggedness, and low switching losses. The device operates with a threshold voltage of 1V, a drain-source on resistance of 0.09 ohms, and a maximum drain current of 500mA. It also features high switching speed, low gate-source capacitance, and low gate threshold voltage.

The working principle of the STL100N1VH5 is based on applying an electric field to a n-type material, such as gallium nitride, which produces an electric charge. This charge is then able to control the flow of electrons in the device. The device operates in a saturated region, meaning that the gate voltage is high enough to form a conductive channel. In this state, the device acts as a metal–oxide–semiconductor field-effect transistor.

The STL100N1VH5 is able to provide high-frequency, high-temperature operation, making it suitable for a variety of applications. It is used in high-frequency, high-efficiency power amplification systems for wireless communication systems, base stations, and automotive applications. It is also used in various high-voltage converters and motor drive circuits.

In addition to its use in high-performance applications, the STL100N1VH5 is also useful in power supply applications, such as switching regulators, power factor correction circuits, and DC/DC converters. Additionally, it may be used in high-power applications, such as solar, renewable energy, and other power conversion systems.

The STL100N1VH5 is a powerful MOSFET with a wide range of potential applications. Its high-temperature operation and power performance make it ideal for a variety of high-frequency and high-voltage systems. Additionally, its low on-state resistance and gate-source capacitance provide excellent reliability and low switching losses. In summary, the STL100N1VH5 is an excellent choice for a variety of high-power applications.

The specific data is subject to PDF, and the above content is for reference