Allicdata Part #: | 497-11843-2-ND |
Manufacturer Part#: |
STL10N3LLH5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 9A POWERFLAT |
More Detail: | N-Channel 30V 9A (Tc) 2W (Ta), 50W (Tc) Surface Mo... |
DataSheet: | STL10N3LLH5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±22V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Series: | STripFET™ V |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL10N3LLH5 is a high voltage, high voltage, high speed MOSFET transistor, which has been designed to provide a robust and reliable solution for a wide range of applications. This type of MOSFET has been designed to operate in high frequency applications and is able to withstand large voltage and temperature spikes that other types of MOSFETs may not be able to withstand.
It is a single transistor, meaning that it has a single source, gate and drain, which allows for the transistor to be used in a variety of applications. The transistor has a bipolar construction, which allows for an increase in current conductivity and efficiency, as well as better thermal management.
The source and drain are connected to a series of metal oxide field-effect transistors known as a gate electrodes. These gate electrodes are made from a combination of silicon and nickel. The gate electrode affects the amount of current that can flow through the transistor by controlling the amount of charge that is between the gate and the source.
When the gate is in a negative state, no current will flow between the source and drain. When the gate is in a positive state, current will be allowed to flow. When the gate is in a floating state, the device will maximize the amount of current that is flowing and this is known as full conduction. The gate electrodes can be easily adjusted to achieve the desired performance characteristics.
The STL10N3LLH5 is particularly suitable for use in high power applications, such as adjustable voltage converters, DC/DC converters, power supplies, and motor control. It is also used for high frequency applications like RF circuits, high speed switching, PWM applications, and low noise audio amplifiers.
The STL10N3LLH5 is highly resistant to temperature variations, making it ideal for use in a variety of environments. In addition, it is highly reliable and can handle large voltage and temperature spikes, making it a great choice for applications requiring a high level of performance. It is also a cost-effective solution for high voltage and high speed applications.
The working principle behind the high voltage, high speed MOSFET of STL10N3LLH5 is that when the gate is in a positive state, current is allowed to flow from the source to the drain. The flow of current is determined by the voltage drop across the gate and source, which creates a channel through which electrons can flow.
When the gate is in a negative state, the channel is closed, preventing any current from flowing. The voltage drop is determined by the gate voltage, as well as the bias voltage. As the gate voltage decreases, the flow of current is also reduced. This is known as the voltage-sensing characteristic of the device.
The STL10N3LLH5 is a high voltage, high speed MOSFET which has been designed to provide reliable performance in a wide range of applications, from adjustable voltage converters to power supplies and motor control. Its bipolar construction and adjustable gate electrodes make it an ideal choice for high frequency and high power applications, while its excellent temperature resistance makes it suitable for a variety of environments.
The specific data is subject to PDF, and the above content is for reference
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