STL140N4LLF5 Allicdata Electronics
Allicdata Part #:

497-10879-2-ND

Manufacturer Part#:

STL140N4LLF5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 140A PWRFLAT5X6
More Detail: N-Channel 40V 140A (Tc) 80W (Tc) Surface Mount Pow...
DataSheet: STL140N4LLF5 datasheetSTL140N4LLF5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
Vgs (Max): ±22V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Series: STripFET™ V
Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL140N4LLF5 is an enhancement-mode part from STMicroelectronics that is configured as either a depletion-mode or enhancement-mode N-channel logic level Field-Effect Transistor (FET). It is housed in a plastic surface-mount package and is optimized for switching applications.

The FET\'s gate is controlled by its gate voltage, allowing it to be turned on and off like a switch. It is a type of transistor that is specially designed to handle high-frequency signals since its input capacitance is much lower than that of a standard bipolar junction transistor (BJT). It is also capable of handling large amounts of power, making it ideal for power switching applications.

The primary application for the STL140N4LLF5 is for switching high-frequency signals. It can be used as a low-side switch in two-state configurations, such as in a three-transistor switching circuit, as well as in high-speed power switching applications. The low input capacitance of the FET also makes it suitable for use in high-frequency circuit designs.

The STL140N4LLF5 has a maximum continuous drain-source voltage (VDS) of 80V, a maximum continuous gate-source voltage (VGS) of ±30V, and a maximum drain current (ID) of 35A. The on-resistance is 1.5mA, which translates to a low-conduction loss. In addition, this FET has a fast switching speed with a rise and fall time of 8.5ns.

The working principle of the STL140N4LLF5 is based on the principle of semiconductor conduction. It uses a thin layer of material between the two electrodes, the source and drain. When a voltage is applied to the gate, the current, or flow of electrons, between the two is controlled by the electric field generated by the gate, allowing the transistor to act as an electronic switch. When the gate voltage is above a certain threshold, the transistor is said to be in the “on” state and allows for current to flow between the source and drain. Conversely, when the gate voltage is below the threshold, the transistor is said to be in the “off” state and no current is allowed to flow. This is how the STL140N4LLF5 is able to control the flow of current in circuits.

The STL140N4LLF5 is designed for use in a wide variety of applications requiring switching high-frequency signals or currents. It is suitable for use in DC-DC converters, power supplies, motor control circuits, and other switching circuits. It is also used for various telecom and automotive applications such as for power factor correction and power line communication systems. The FET also has applications in audio and video amplifiers, radio receivers, and photovoltaic rectifiers.

The STL140N4LLF5 offers several advantages over standard BJTs. Its low input capacitance allows it to switch signals faster and its lower power losses make it more efficient than BJTs. It is also more rugged than BJTs and can withstand higher temperatures and voltages. This FET is also very easy to use and can be easily incorporated into designs.

In summary, the STL140N4LLF5 is an enhancement-mode logic level FET from STMicroelectronics that is designed for use in applications requiring switching high-frequency signals or currents. It is based on the principle of semiconductor conduction and consists of a thin layer of material between the two electrodes. The FET has a fast switching speed and can handle large amounts of power, making it ideal for power switching applications. It is also more rugged than BJTs and can withstand higher temperatures and voltages. The STL140N4LLF5 offers several advantages over standard BJTs and can be easily incorporated into designs.

The specific data is subject to PDF, and the above content is for reference

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