STL13NM60N

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The STL13NM60N is part one of STMicroelectronics\' fourth-generation N-channel silicon-gate power MOSFETs, which are designed for use in applications such as switching, rectification, and power control. This MOSFET is capable of handling levels of current up to 18 A and of working at temperatures up to 250°C (TA). Thanks to its low on-state resistance (RDS(ON)) and ultra-low gate charge (Qg), it is suitable for a wide range of applications.

The STL13NM60N is based on a silicon-gate controlled vertical N-MOS transistor that is protected by a PN junction. This transistor is used to control the conduction of electrons between the drain and the source. It can be used as either an enhancement or depletion mode device, depending on the voltage applied to its gate. In enhancement mode, it is used to increase the current flowing between the drain and the source. In depletion mode, it serves to decrease the current. It is suitable for use in applications such as low-voltage and low-power supply designs.

The device is typically used as a switch in applications where high power or current is required. As a switch, it has two distinct states: on or off. When the MOSFET switch is off, no current is allowed to pass between the drain and source. When the device is on, a current will flow between these two terminals. The amount of current that can flow through the device will depend on the size of its internal resistance, known as RDS(ON).

The STL13NM60N is a voltage-controlled switch, meaning that when a voltage is applied to its gate terminal, the electrons are allowed to flow between the drain and source terminals. As the voltage increases, the amount of current that the MOSFET can carry increases, enabling it to be used for applications that require large amounts of power to be switched on and off. The device is also relatively low-power and low voltage, enabling it to be used in a variety of applications that do not require high power or current levels.

The device\'s main advantages are its low power consumption, low gate charge, and low RDS(ON). This makes it ideal for applications such as switching, rectification, power control, and power switching. In addition, it is well-suited for integrated circuits, as well as systems that require versatile power switching capabilities.

In order to ensure the performance of the device, the user must ensure that proper layout and thermal management are used. This includes providing sufficient clearance around the device, as well as adequate cooling. The device must also be sufficiently insulated to prevent any shorting between the source and drain terminals.

Overall, the STL13NM60N is an excellent MOSFET transistor capable of providing reliable operation and superior performance in a range of applications. It is well-suited for use in low-voltage and low-power supply designs and is capable of handling levels of current up to 18 A and working at temperatures up to 250°C (TA). Thanks to its low on-state resistance (RDS(ON)) and ultra-low gate charge (Qg), it is the ideal choice for a wide range of applications.

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