STL100NH3LL

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The STL100NH3LL is a single-gate N-channel field-effect transistor (FET) and is a popular member of the family of advanced power MOSFETs. It has two electrical terminals, the gate and the drain, and useful properties such as low on-state resistance and breakdown voltage. often used in high-power applications, this device is designed with advanced silicon processing and depositing techniques.

Such devices are increasingly important to modern electronics design because they offer several benefits over other active devices such as bipolar transistors. In particular, MOSFETs such as the STL100NH3LL have excellent scalability along all relevant electrical parameters. Furthermore, low gate charge and low gate capacitance allow for very fast switching times. This makes them suitable for high-frequency applications operating at hundreds of kilohertz and higher.

The STL100NH3LL is a drain-to-source voltage N-channel MOSFET. It has a maximum drain-to-source voltage of 100V, a maximum gate-to-source voltage of 40V, and a continuous drain current rating of 35A. The total gate charge is 8nC, its drain-source on-resistance is 2.6mΩ, and its threshold voltage is 2V.

In addition to these electrical characteristics, the device also has secondary parameters that need to be specified. These include the junction-to-case thermal resistance (R__θJC) and the junction-to-ambient thermal resistance (R__θJA). R__θJC is the thermal resistance between the transistors junction and its Gull-Wing-style package body. R__θJA is the thermal resistance between the junction and the air surrounding the package. In the case of the STL100NH3LL, these values are 0.538__θJC_ and 28__θJA_, respectively.

The device is optimised for use in switching applications. In this mode, the device’s internal structure is configured to allow a gate current to turn the channel on. When the gate voltage exceeds the threshold voltage, the transistor’s channel is opened, allowing current to flow between the drain and source. When the gate voltage is reduced below the threshold voltage, the channel is closed and the drain-source current is blocked. The typical switching times are very fast, however, the rate of switching is limited by the device’s capacitance.

The STL100NH3LL is ideally suited to numerous high-power applications across many fields, including signal conditioning, portable device power management, power line filtering, and discrete signal and power conversion. With the rising popularity of mobile devices, these advanced MOSFETs will become increasingly important in modern electronics design.

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