STL135N8F7AG

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerFlat™ (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	4.8W (Ta), 135W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6800pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	103nC @ 10V
Series:	Automotive, AEC-Q101, STripFET™ F7
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	130A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STL135N8F7AG Application Field and Working Principle

Introduction

The STL135N8F7AG is a high-performance lateral N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor), with an n-type vertical planar cell design. Operating with a low gate-to-source voltage (VGS), its maximum drain current (ID) is 80A. This MOSFET is suitable for a wide range of power management applications, such as set-top boxes, automotive applications, and industrial control. Additionally, the low gate-to-source voltage capability allows for higher efficiency power conversion stages.

Types of MOSFETs

MOSFETs are broadly divided into two categories: enhancement mode and depletion mode. The most commonly used type of MOSFET is an enhancement mode type. It is also the type used in the STL135N8F7AG MOSFET. This type requires a gate-to-source voltage to turn the device on. In contrast, the depletion mode MOSFET does not require any gate-to-source voltage to turn on, and has to be turned off with a gate-to-source voltage.

Application Field

Due to its high-performance characteristics, the STL135N8F7AG MOSFET is well suited for a variety of power management applications. This includes automotive applications, such as power management in engine control units, as well as industrial control, set-top boxes and other applications requiring reliable and precise power delivery. Additionally, the MOSFET features low gate-to-source voltage capability, which allows for greater efficiency in power conversion stages.

Working Principle

The STL135N8F7AG MOSFET is an n-channel enhancement-mode device. This type of MOSFET operates with a low gate-to-source voltage (VGS). The gate terminal of the device acts as an insulated gate, allowing the flow of current between the drain and the source when a voltage is applied. This voltage level is determined by the gate-to-source voltage applied. The device\'s n-type vertical planar cell design also ensures that the N-channel maintains a certain level of breakdown voltage over a wide temperature range, meaning it can sustain high source-to-drain voltages with minimal leakage.

Conclusion

The STL135N8F7AG MOSFET is a high-performance lateral N-channel enhancement mode device suitable for a wide variety of power management applications, including automotive, industrial and home electronics. The MOSFET features low gate-to-source voltage operation, as well as a n-type vertical planar cell design. This design ensures low leakage current, as well as high voltage breakdown. As such, the STL135N8F7AG is ideal for high-efficiency power delivery stages.

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