| Allicdata Part #: | 497-15145-2-ND |
| Manufacturer Part#: |
STL17N65M5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 1.8A POWERFLAT |
| More Detail: | N-Channel 650V 1.8A (Ta), 10A (Tc) 2.8W (Ta), 70W ... |
| DataSheet: | STL17N65M5 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PowerFlat™ (8x8) HV |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 70W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 816pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 374 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta), 10A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STL17N65M5 is a high-performance N-channel enhancement mode MOSFET that is designed in such a way to make it suitable for a variety of applications. It is designed with an advanced trench cell structure, a trimming process and an advanced channel structure. This enables it to offer higher levels of robustness, lower resistance, better electrostatic discharge protection, improved break-down voltage and superior ruggedness. It is an optimal solution for applications that require low-gate charge and high levels of efficiency.
Application Fields Of STL17N65M5
The STL17N65M5 is suitable for a wide range of applications, such as switching regulators, DC-DC converters, load switches and other load switches. It is also used in automotive applications, telecom applications, power supplies, motor controllers, TV/audio circuits and more. In addition, it can also be used in a wide range of industrial power solutions, such as telecommunication, construction, 4G/LTE base station systems, DC/DC converter and other industrial power control applications.
The Working Principle Of STL17N65M5
The working principle of STL17N65M5 is relatively basic: when a gate voltage is applied, the electrons and holes located in the channel region of the MOSFET are separated and hence, the channel is turned off. This allows current to flow through the channel and the device acts like a switch. The gate voltage required to turn the channel on is known as the drain-source voltage, or Vds, and this is the voltage that is used to control the gate pin.
The main advantages of the STL17N65M5 MOSFET are its low gate charge, high breakdown voltage, improved ESD protection, low power dissipation and its advanced design that enables it to handle high load currents. In addition, it features full RoHS compliance and is built using advanced trench metal-oxide (TMOS) technology. This allows for its superior performance even in high-switching applications.
Overall, the STL17N65M5 MOSFET is a high-quality device with a number of features that make it suitable for a wide range of applications, including power supplies, motor controllers, load switches and other load switches, as well as automotive, TV/audio circuit and 4G/LTE base station systems. Its low gate charge and high breakdown voltage, combined with its improved ESD protection and advanced design make it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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STL17N65M5 Datasheet/PDF