| Allicdata Part #: | 497-15054-2-ND |
| Manufacturer Part#: |
STL12N65M2 |
| Price: | $ 0.54 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 8.5A PWRFLAT56 |
| More Detail: | N-Channel 650V 5A (Tc) 48W (Tc) Surface Mount Powe... |
| DataSheet: | STL12N65M2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.54400 |
| 10 +: | $ 0.52768 |
| 100 +: | $ 0.51680 |
| 1000 +: | $ 0.50592 |
| 10000 +: | $ 0.48960 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PowerFlat™ (5x6) HV |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
| Series: | MDmesh™ |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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.The STL12N65M2 is a type of single-component MOSFET which is heavily used in the electronic industry. This type of MOSFET is ideal for applications in high power and low voltage output where efficiency is necessary. The STL12N65M2 is relatively small in size and has a maximum power rating of 285 watts.
A MOSFET, also known as a metal-oxide-semiconductor field-effect transistor, is an electronic device that is used to control the flow of current in an electrical circuit. The defining feature of MOSFETs is that they do not require current to flow through them in order to switch on or off - this makes them well suited for applications where high power and low voltage are needed. In the case of the STL12N65M2, it is mainly used in power supplies, motor controls, DC-DC converters and other applications which require high performance.
The STL12N65M2 is composed of two parts; the gate and the source. The gate is a metal electrode which is electrically isolated from the substrate and the source is a metal connection which is usually connected to source voltage. The gate and source together form a channel which controls the current flowing through the MOSFET. The gate is used to alter the electrical charge in the channel, allow current to flow, and thereby allow the MOSFET to turn on and off.
The ST12N65M2 is designed to have a very low on-state resistance and a high off-state leakage. This allows the MOSFET to have high efficiency and low power losses when in use. The main advantages of using MOSFETs over other types of transistors is their higher efficiency, greater switching capabilities and their low cost. The ST12N65M2 also has a logic level gate threshold voltage which makes it suitable for low voltage, high performance applications.
In conclusion, the ST12N65M2 is a MOSFET that is designed for applications which require high power and low voltage. Its main features include a low on-state resistance and low power losses, as well as a high off-state leakage and a logic level gate threshold voltage. Its main applications include power supplies, motor controls, DC-DC converters and other applications which require high performance.
The specific data is subject to PDF, and the above content is for reference
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STL12N65M2 Datasheet/PDF