STL13N65M2 Allicdata Electronics
Allicdata Part #:

497-15476-2-ND

Manufacturer Part#:

STL13N65M2

Price: $ 0.65
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 6.5A POWERFLAT
More Detail: N-Channel 650V 6.5A (Tc) 52W (Tc) Surface Mount Po...
DataSheet: STL13N65M2 datasheetSTL13N65M2 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.59173
Stock 1000Can Ship Immediately
$ 0.65
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6) HV
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 475 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL13N65M2 is a N-channel enhancement-mode vertical DMOS power transistor for high power switching applications. Specifically designed for use in low-voltage applications, the transistor offers superior performance characteristics that make it ideal for portable and consumer products.

The STL13N65M2 is a high-speed, high-current switching device that can be used in various power switching applications. It features low on-state resistance and high breakdown voltage, making it ideal for use in low-voltage applications. The device also features fast switching performance and is capable of providing up to 8A continuous drain current.

The device is available in a wide range of packages that are suitable for many different applications. It is also available as a surface-mount device with exposed drain pads for better thermal performance. The device is also designed for use in high switching frequencies and comes with an insulated-gate bipolar transistor (IGBT) driver for improved reliability.

The working principle of the STL13N65M2 is based on the N-channel MOSFETs. The device is constructed using two back-to-back PN junction gate transistors in an N-channel enhancement-mode configuration. The transistor\'s gates are connected to the source, while the source and the drain are connected between the source and the gate. When a gate voltage is applied, a channel is formed between the source and the drain.

As current flows through the channel, the charge carriers in the channel interact with the gate voltage to form an electric field across the channel. This electric field then controls the flow of current through the channel, thus modulating the drain current as a function of the gate voltage. This enables the device to switch rapidly and efficiently.

The STL13N65M2 is widely used in a variety of applications, including DC-DC converters, power switching applications, power supply circuits, and motor controls. It is also a popular choice for voltage regulators, amplifiers, and circuit design needs. The device is used in the automotive, telecommunication, industrial, medical, and consumer electronics applications.

In conclusion, the STL13N65M2 is a high-performance N-channel vertical DMOS power transistor device that offer excellent performance characteristics. The device is suitable for use in various power switching applications and features low on-state resistance, high breakdown voltage and fast switching performance. The device is widely used in applications such as motor controls, DC-DC converters, power switching applications, power supply circuits, and more.

The specific data is subject to PDF, and the above content is for reference

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