STL10LN80K5

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FETs, also known as field-effect transistors, are electronic devices commonly used in digital circuits, with their operations based on a two-terminal source and drain and a thirdterminal, known as the gate. The gate holds charge and can be used to control the current flow between the source and the drain. Among the different types of FETs, the single MOSFET is one of the most common.

The STL10LN80K5 single MOSFET is a N-Channel MOSFET that is fabricated using advanced CMOS power process technology. The MOSFET has a drain-source Voltage (V_DS) of 800V, current capacity of 10A, low gate charge (Q_g) of 13.2nC and a low threshold voltage (V_th) of 1.7V. It is ideal for applications such as electrical relays, switching motors, rectifiers, regulators and loads having high rated current and switching speed.

The source of a MOSFET is a piece of semiconductor material, such as silicon, in which electrons are fed from the source into the channel. The channel is located between the source and the drain and the electrons are transferred through the channel, allowing current to flow through the device. The gate of the MOSFET is made of metal and is insulated by a thin dielectric layer of silicon dioxide. By applying a voltage to the gate, it is possible to control the flow of electrons between the source and the drain. This is commonly referred to as "electrical potential" or "threshold voltage".

When the threshold voltage is applied to the gate of the STL10LN80K5, the channel between the source and drain opens, allowing current to flow. Depending on the value of the threshold voltage, the channel may be either open or closed. If the threshold voltage is high, the channel will be open and allow for a larger current. If the threshold voltage is low, the channel will be closed, allowing for only a small current to flow. The STL10LN80K5 MOSFET features a low threshold voltage of 1.7V and a maximum current capacity of 10A, making it a great choice for high current applications.

Due to its low gate charge, the STL10LN80K5 can operate at high frequencies, allowing for faster switching speeds. It also includes an integrated anti-parallel body diode, which prevents unwanted reverse current flow. This feature is helpful when using the device in circuits that require low reverse leakage current.

The STL10LN80K5 MOSFET is ideal for applications that require high current capacity and high switching speeds. It is suitable for use in electrical relays, motor switching circuits, rectifiers, circuit load regulators and other high current/high speed applications. Additionally, its low gate charge makes it perfect for circuits that need to be switched rapidly and efficiently, such as in high-speed data processing and communication applications.

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