
Allicdata Part #: | 497-11099-2-ND |
Manufacturer Part#: |
STL11N3LLH6 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 11A POWERFLAT |
More Detail: | N-Channel 30V 11A (Tc) 2W (Ta), 50W (Tc) Surface M... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.30328 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STL11N3LLH6 is a single N-Channel MOSFET that is widely used in many different applications. The device is rated for a maximum drain current (Id) of 11A, a drain-source voltage (Vds) of 40V, and a maximum drain-source on-state resistance (Rdson) of 7.5mΩ. STL11N3LLH6 is made from a vertical DMOS process and is housed in the TO220-3L package.
The STL11N3LLH6 has a wide variety of applications due to its relatively low Rdson value and its high current handling capability. The device is typically used in DC-DC converter applications, electronic motor cycles, uninterruptible power supplies, and lighting control. The device can also be used in automotive applications such as in power door lock circuits, fuel injector driver, and HVAC systems.
The working principle of the STL11N3LLH6 is the same as other MOSFETs. When there is no voltage applied to the gate electrode, the device is off and the gate-source and gate-drain junctions act as isolated mounts. Once a voltage is applied to the gate electrode, the parasitic gate-source and gate-drain capacitances are activated. This creates an inversion layer in the channel region that allows carriers to flow between the source and the drain electrodes creating a “conducting channel” and gives the device a low resistance between its source and drain leads.
The advantage of the STL11N3LLH6 is that it features a low Vds and Rdson. This allows the device to be used in many different applications where high currents need to be switched on and off quickly without significantly dropping the voltage across the switch. Furthermore, since the device utilizes a low Vds, it can be used in higher voltage applications without being damaged by the excessive voltage.
In conclusion, the STL11N3LLH6 is a single N-Channel MOSFET suitable for a variety of applications. It has a low Rdson and a wide Vds range, making it ideal for switching high currents in applications like DC-DC converters, LED lighting, and automotive applications. The device is especially useful in applications where high current and voltages are present, since it can withstand the higher voltages without suffering from significant losses.
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