STL11N6F7

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerFlat™ (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.9W (Ta), 48W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1035pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	STripFET™
Rds On (Max) @ Id, Vgs:	12 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The STL11N6F7 is a common field-effect transistor (FET) used in many types of applications. It is a single N-channel enhancement-mode MOSFET, also known as an enhancement-mode metal–oxide–semiconductor field-effect transistor (MOSFET). As such, it is an essential part of many circuits, performing a variety of tasks depending on the application.The STL11N6F7 is primarily used in circuits where low- to medium-current levels must be controlled with a low gate-to-source voltage. This makes it ideal for use in portable electronics, audio equipment, and automotive systems, among other applications. The device is also beneficial for reducing switching losses, enabling high-efficiency operation in a variety of applications, as well as for providing a high degree of back gate control.At its most fundamental, a MOSFET is a device that is used to modify the output voltage of an electrical circuit by passing or “transistorizing” an input signal. It works by allowing current to pass through the gate, controlling the gate-to-source voltage, and also regulating the flow of current between the source and drain terminals. As a result, it is able to amplify or switch an input signal, either increasing or decreasing its output voltage depending on the application.In the specific case of the STL11N6F7, the device is capable of operating at temperatures up to 150ºC, for the highest levels of reliability and staying power. The device also features a high-voltage Gate-to-Source Charge Pump at the JFET pin for accurate control. This feature allows for low on-resistance and high-current operation, enabling superior performance in high-current applications.In terms of its physical size, the STL11N6F7 is a small 4-lead Tolon mold device. It is constructed using a silicon-oxide-nitride-oxide-silicon process, and features N-Channel low-voltage depletion-mode technology. The device itself is composed of a drain, source, and gate electrode, all of which are encapsulated in a single case made of low-cost plastic.The STL11N6F7 is a reliable and robust device, allowing for a wide variety of applications. In terms of its operation, it is important to know that it can be either in a depletion mode or enhancement mode depending on the application. When operating in a Depletion mode, the device’s output is “on” when an appropriate gate-to-source voltage is applied, and “off” when the voltage is removed. On the other hand, operating in an Enhancement mode requires a gate bias greater than the device’s threshold voltage to turn on the device and a bias smaller than the device’s threshold voltage to turn it off. All in all, the STL11N6F7 is an incredibly versatile device, and it can be used for a broad range of purposes. As it is a MOSFET, it is capable of controlling low-level to medium-currents, amplifying and switching input signals, and providing a high degree of back gate voltage control. The device is also extremely reliable, with a maximum temperature rating of up to 150ºC. Furthermore, thanks to its small size, it is perfect for use in portable electronics and automotive systems, among other applications.

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