
Allicdata Part #: | TPH3202LS-ND |
Manufacturer Part#: |
TPH3202LS |
Price: | $ 8.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 600V 9A PQFN |
More Detail: | N-Channel 600V 9A (Tc) 65W (Tc) Surface Mount PQFN... |
DataSheet: | ![]() |
Quantity: | 17 |
1 +: | $ 7.96950 |
10 +: | $ 7.17255 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 3-PowerDFN |
Supplier Device Package: | PQFN (8x8) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 480V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 5.5A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TPH3202LS is a high voltage and high current single N-Channel MOSFET which consists of a source, drain and gate terminal. The source and drain are equivalent and are made up of a common semiconductor material doped with n-type impurities. The application field of TPH3202LS is mainly used in high-frequency switching, such as AC-DC and DC-DC converters, so as to adjust the output current and voltage of power meters, lighting systems, uninterruptible power supplies and other equipment.
The principle of TPH3202LS working is based on the phenomenon of electric field effect. The gate terminal of MOSFET is a metal-oxide-semiconductor structure composed of metal gate, insulation layer (such as silicon dioxide) and semiconductor substrate. The gate metal layer has very high electrical resistance and the semiconductor substrate has very high conductivity. When a voltage is applied between the gate and the source, holes (negative charges) will be attracted from the semiconductor substrate and form a thin, negative charge layer on the surface of the semiconductor substrate. This form of negative charge known as a depletion region is created due to the repulsion of existing charges in the substrate and the attracted holes. Since the negative charge is established on the semiconductor substrate surface, it can also cause a strong electric field between the gate and the source. Therefore, the two regions, the gate area and the source area, are totally isolated and no current can be passed through.
When the gate voltage is higher than the source voltage, the electron-hole pair reflux phenomenon of the substrate occurs and electrons pass through the substrate surface. Thus, an inversion type channel is formed between the gate and source and the device works as an open circuit. On the contrary, when the gate voltage is lower than the source voltage, the negative surface charge barrier is suppressed and electrons are prevented from passing through the substrate surface. As a result, the MOSFET works as a closed-circuit device. Through the above working principle, TPH3202LS can control the flow of current between the drain and the source, just like the electrical switch which can be ON or OFF.
In terms of the performance parameters, TPH3202LS has a low-voltage threshold, fast switching speed and a high voltage blocking capability of up to 500V. It is also a very reliable product with excellent thermal performance, making it suitable for applications involving large power and high frequency. Furthermore, this device has very low input capacitance, as well as low output capacitance, which result in very low power consumption. Moreover, TPH3202LS also has a very low static power consumption, and therefore it can achieve excellent power efficiency for various switching applications, such as DC-DC converters, power converters, power meters and relevant devices.
In conclusion, TPH3202LS is an excellent high voltage and high current single N-Channel MOSFET which works on the principle of electric field effect. It is usually applied in high-frequency switching, and its other outstanding performance parameters such as low-voltage threshold, fast switching speed and brilliant thermal performance, make it suitable for all kinds of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TPH3206LDB | Transphorm | 7.53 $ | 1000 | MOSFET N-CH 650V 16A PQFN... |
TPH3208PS | Transphorm | 8.6 $ | 179 | MOSFET N-CH 650V 20A TO22... |
1SV281(TPH3,F) | Toshiba Semi... | 0.06 $ | 1000 | DIODE VCO V/UHF 10V ESCVa... |
TPH3212PS | Transphorm | 11.64 $ | 591 | MOSFET N-CH 650V 27A TO22... |
TPH3202LD | Transphorm | 8.77 $ | 81 | MOSFET N-CH 600V 9A PQFNN... |
1SV307(TPH3,F) | Toshiba Semi... | 0.07 $ | 12000 | SWITCHING DIODE 30V 2 USC... |
1SV322(TPH3,F) | Toshiba Semi... | 0.06 $ | 3000 | DIODE VARACTOR 10V USCVar... |
TPH3300CNH,L1Q | Toshiba Semi... | 0.49 $ | 1000 | MOSFET N-CH 150V 18A 8-SO... |
TPH3208LDG | Transphorm | 9.77 $ | 416 | MOSFET N-CH 650V 20A PQFN... |
TPH3208LSG | Transphorm | 9.77 $ | 342 | MOSFET N-CH 650V 20A 3PQF... |
TPH3208LD | Transphorm | 7.29 $ | 1000 | MOSFET N-CH 650V 20A PQFN... |
TPH3205WSB | Transphorm | 17.86 $ | 336 | MOSFET N-CH 650V 36A TO24... |
TPH3206PSB | Transphorm | 7.92 $ | 737 | MOSFET N-CH 650V 16A TO22... |
DSF07S30U(TPH3,F) | Toshiba Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 700MA ... |
TPH3R003PL,LQ | Toshiba Semi... | 0.36 $ | 3000 | X35 PB-F POWER MOSFET TRA... |
TPH3R704PL,L1Q | Toshiba Semi... | 0.22 $ | 1000 | MOSFET N-CH 40V 92A TSONN... |
TPH3208LS | Transphorm | 9.77 $ | 119 | MOSFET N-CH 650V 20A PQFN... |
TPH3206LD | Transphorm | 9.09 $ | 362 | MOSFET N-CH 600V 17A PQFN... |
TPH3208PD | Transphorm | 8.6 $ | 160 | MOSFET N-CH 650V 20A TO22... |
TPH3202PD | Transphorm | 7.69 $ | 149 | MOSFET N-CH 600V 9A TO220... |
1SV311(TPH3,F) | Toshiba Semi... | 0.0 $ | 1000 | DIODE VARACTOR 10V ESCVar... |
TPH3205WSBQA | Transphorm | 19.54 $ | 907 | MOSFET N-CH 650V 35A TO24... |
TPH3206LSB | Transphorm | 9.09 $ | 348 | MOSFET N-CH 650V 16A PQFN... |
TPH3202LS | Transphorm | 8.77 $ | 17 | MOSFET N-CH 600V 9A PQFNN... |
TPH3R203NL,L1Q | Toshiba Semi... | 0.35 $ | 5000 | MOSFET N-CH 30V 47A 8-SOP... |
TPH3202PS | Transphorm | 7.69 $ | 129 | MOSFET N-CH 600V 9A TO220... |
TPH3206PD | Transphorm | 8.57 $ | 493 | MOSFET N-CH 600V 17A TO22... |
TPH3206PS | Transphorm | 7.9 $ | 402 | MOSFET N-CH 600V 17A TO22... |
DSF05S30U(TPH3,F) | Toshiba Semi... | 0.0 $ | 1000 | DIODE SCHOTTKY 30V 500MA ... |
TPH3206LDGB | Transphorm | 9.09 $ | 290 | MOSFET N-CH 650V 16A PQFN... |
TPH3207WS | Transphorm | 27.42 $ | 345 | MOSFET N-CH 650V 50A TO24... |
TPH3206LS | Transphorm | 9.09 $ | 191 | MOSFET N-CH 600V 17A PQFN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
