Allicdata Part #: | TPH3206PD-ND |
Manufacturer Part#: |
TPH3206PD |
Price: | $ 8.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 600V 17A TO220 |
More Detail: | N-Channel 600V 17A (Tc) 96W (Tc) Through Hole TO-2... |
DataSheet: | TPH3206PD Datasheet/PDF |
Quantity: | 493 |
1 +: | $ 7.78680 |
10 +: | $ 7.00938 |
50 +: | $ 6.38644 |
100 +: | $ 5.76343 |
250 +: | $ 5.29611 |
500 +: | $ 4.82880 |
Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 480V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 11A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The TPH3206PD is a Field-effect Transistor (FET) designed for use in a wide range of applications. It is a p-channel, single MOSFET that features excellent energy efficiency, low on-resistance, high peak and average currents, and fast switching. The TPH3206PD makes use of advanced design techniques to produce a high-performance device with a wide range of application fields.
The TPH3206PD is used in numerous applications, including power management, motor control, and communication systems. It is also often used in audio, automotive, computer, and embedded industrial applications. In each of the above applications, the TPH3206PD can be used to switch on and off, regulate, and provide feedback to devices.
The working principle of the TPH3206PD is based on the phenomenon of field effect. In this type of transistor, an electric field is created around the source-drain region of the device. This field is known as the gate and it controls the current flowing from the source to the drain. The transistor is designed so that when the gate voltage is increased, current increases, and when the gate voltage is reduced, current decreases. This type of transistor is called a p-channel FET, because the current flows from the source to the drain when the gate voltage is increased.
The TPH3206PD is also a single MOSFET device, meaning that it has only one gate, source, and drain region. This device is capable of switching high peak and average currents with a fast switching time, making it ideal for digital control applications. In a single MOSFET design, the device is triggered by a single gate voltage that controls the current flowing from the source to the drain. This feature makes the device ideal for low power applications, as it reduces the need for multiple gate and drain biasing circuits.
Finally, the TPH3206PD is an energy efficient device. It is often paired with other components to improve efficiency and reduce power consumption. The high current capability of the device also allows for higher performance and better control over power management.
In summary, the TPH3206PD is a powerful and reliable Field-effect Transistor (FET) designed for a wide range of applications. It is a single MOSFET device, making it energy efficient, fast-switching, and capable of controlling high peak and average currents. The device is ideal for low power applications, and can be paired with other components to increase efficiency.
The specific data is subject to PDF, and the above content is for reference
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