TPH3208LSG

Vgs(th) (Max) @ Id:	2.6V @ 300µA
Package / Case:	3-PowerDFN
Supplier Device Package:	3-PQFN (8x8)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	96W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	760pF @ 400V
Vgs (Max):	±18V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 8V
Series:	--
Rds On (Max) @ Id, Vgs:	130 mOhm @ 14A, 8V
Drive Voltage (Max Rds On, Min Rds On):	8V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	GaNFET (Gallium Nitride)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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TPH3208LSG Application Field and Working Principle

TPH3208LSG is a high-performance N-channel Logic-Level Enhancement-Mode Field-Effect Transistor (E-MOSFET) embedded with a Zetex ZXTPH3208LSG packaging, developed and provided by Diodes Incorporated. This particular model of E-MOSFETs is specifically designed for point-of-load, motor drive, and VOIP applications where low RDS(ON)s with low gate charge are essential.

TPH3208LSG Application Field

TPH3208LSG is specifically designed for point-of-load, motor drive, and VOIP applications. Zetex ZXTPH3208LSG E-MOSFETs provide excellent reliability performance and an enhanced switching performance over other conventional E-MOSFETs. This device is suited for load switch applications due to its low RDS(ON), and is best suited for applications where low gate charge is essential.

TPH3208LSG Working Principle

An E-MOSFET works on the principle of controlling the flow of electrons through the channel. A positive voltage applied to the gate of the device induces a charge on the oxide layer situated between the gate and the substrate. This charge induces a layer of electrons on the substrate, which forms a conductive channel between the source and drain. If the voltage applied at the gate is negative, this charge is depleted and the electrons are repelled, thus deactivating the channel and breaking it up. The actual switching of an E-MOSFET is performed through a simple process of controlling the amount of current flowing through the channel; the ON and OFF states are achieved by controlling the gate voltage. When the gate voltage is low, the current is reduced and the device is turned OFF. When the gate voltage increases, the channel is opened and current flow starts. The Zetex ZXTPH3208LSG has a low RDS(ON) of 9.2 mΩ @ 10V, making it an incredibly reliable and efficient device. Additionally, its low gate charge makes it an excellent choice for point-of-load and other low current applications.

Conclusion

The Zetex ZXTPH3208LSG E-MOSFET is an incredibly efficient, reliable, and efficient device that offers excellent performance in applications such as point-of-load, motor drive, and VOIP applications. Its low RDS(ON), low gate charge, and excellent switching performance make it an ideal choice for these applications.

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