TPH3205WSB

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The TPH3205WSB is a trenched MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high current switching applications. It is designed to provide excellent performance in terms of low on-state resistance and ultra-high dV/dt immunity. It is available in the low profile SO-8 package, making it an ideal choice for space-restricted applications.

Features

• Ultra-high dV/dt Immunity
• Low On-state Resistance (RDS(on))
• 100V DS Rating
• Pb-free Halide-free Packages
• Low Profile SO8 Package

Applications

TPS3205WSB MOSFETs are perfect for high current switching applications, such as motor control, power management, industrial automation, and resistor-diodes for low-side switching. Depending on the type, TPH3205WSB transistors can handle up to 110A (source current) and can operate at frequencies up to 50kHz. It is also an ideal choice for battery-powered, low-voltage applications.

Working Principle

MOSFETs, like transistor, are three-terminal devices that allow current to flow between its source and drain, when a voltage is applied to the gate terminal. However, MOSFETs are unipolar, meaning that they allow for the control of only one type of charge carriers (electrons or holes). In the case of the TPH3205WSB, it is electrically controlled by the voltage applied to the Gate terminal, and the electron flow from the source to the darin is controlled. The threshold voltage is the voltage level where the MOSFET begins to conduct and the drain-source on-state resistance is extremely low. When the voltage on the gate terminal is lowered below the threshold voltage, the MOSFET turns off, blocking the majority of current flow.

Characteristics

The salient characteristics of the TPH3205WSB are:

• Max. Drain-Source Voltage: 100V
• Continuous Drain Current: 110A
• Forward Transconductance (gfs): 13.3S
• Output Capacitance (CDS): 160pF
• On-state Resistance (RDS(On)): 10 mOhms
• Gate-Source voltage (VGS): -20 to +20V

Conclusion

The TPH3205WSB is an excellent choice for high current switching applications, as it has low on-state resistance, ultra-high dV/dt immunity and is available in the low profile SO-8 package. It is highly efficient, making it an ideal choice for battery-powered, low-voltage applications.

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