TPH3206PSB Allicdata Electronics
Allicdata Part #:

TPH3206PSB-ND

Manufacturer Part#:

TPH3206PSB

Price: $ 7.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Transphorm
Short Description: MOSFET N-CH 650V 16A TO220AB
More Detail: N-Channel 650V 16A (Tc) 81W (Tc) Through Hole TO-2...
DataSheet: TPH3206PSB datasheetTPH3206PSB Datasheet/PDF
Quantity: 737
1 +: $ 7.20720
10 +: $ 6.48774
50 +: $ 5.91116
100 +: $ 5.33453
250 +: $ 4.90198
500 +: $ 4.46944
Stock 737Can Ship Immediately
$ 7.92
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 81W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
Vgs (Max): ±18V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
Drive Voltage (Max Rds On, Min Rds On): 8V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TPH3206PSB is a N-channel depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in extremely high power applications where voltage is in excess of 600V and current greater than 2 A. It is a very popular component in the power electronics industry due its cost effectiveness, high efficiency, and versatility. This component is used in many types of applications, such as high voltage switching, inverters, and DC-DC converters.

The gate of TPH3206PSB is managed by a gate control electrode, and its structure is also symmetrical. It has three terminals, the gate, drain and source. The drain and source are controlled by applied gate voltage. A higher positive gate voltage makes the transistor conduct more current, and a negative gate voltage causes the transistor not to conduct current. The drain current is proportional to the drain voltage, and this relationship can be represented on a transfer curve. When the gate is sufficiently forward-biased, the maximum current reaches a certain level known as the saturation current.

The TPH3206PSB is known for its robust design, which allows it to cope with multiple thermal cycles and long assembly times without any degradation in performance. Because it has a high forward transconductance and a very low on-resistance, it is widely used in high voltage switching applications. This device is also used in DC-DC converters in order to switch rapidly between two different power levels.

The TPH3206PSB is widely used in high-power applications, such as high-voltage switching, because it has a low RDS(on) and a high power dissipation capability. It is also used in high-voltage control circuits and DC-DC converters. This component is also very useful in circuit protection, and can be combined with other components to create robust circuit protection solutions. The component is also fairly easy to use and can be integrated into other circuits.

The TPH3206PSB has a wide range of applications and can be used in a variety of contexts. It is well-suited to applications that require a high voltage, large current and low on-resistance. The component is also useful in applications that need a robust thermal cycle and is well-suited for long assembly times. The component is also useful for high power applications such as switching, as well as for high voltage control circuits and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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