TPH3R203NL,L1Q Discrete Semiconductor Products |
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Allicdata Part #: | TPH3R203NLL1QTR-ND |
Manufacturer Part#: |
TPH3R203NL,L1Q |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 47A 8-SOP |
More Detail: | N-Channel 30V 47A (Tc) 1.6W (Ta), 44W (Tc) Surface... |
DataSheet: | TPH3R203NL,L1Q Datasheet/PDF |
Quantity: | 5000 |
5000 +: | $ 0.31702 |
Vgs(th) (Max) @ Id: | 2.3V @ 300µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-SOP Advance (5x5) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta), 44W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 23.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A TPH3R203NL,L1Q is a single transistor that uses field-effect technology (FET) and comes in a variety of different forms. These transistors are most commonly used in MOSFET applications. They offer a large range of advantages, as well as some disadvantages, and this article will go into detail about the application field and work principle of the TPH3R203NL,L1Q.
Application field
TPH3R203NL,L1Q FETs are incredibly versatile devices and can be used for a wide range of applications. In general, the majority of FETs are used in electronics, such as analog circuits and digital circuits. Here are some of the most common application fields of the TPH3R203NL,L1Q:
- High-frequency switching applications.
- Amplifier circuits.
- Driving loads.
- Mutual inductance applications.
- Voltage regulation.
- Lighting.
- Noise reduction.
- Filtering.
These transistors are also ideal for applications involving power MOSFETs or high-frequency transmitting systems, as well as for voltage or current regulating circuits. Due to their versatility, these FETs can be used in just about any type of electronic circuit, making them incredibly popular and widely used.
Working principle
TPH3R203NL,L1Q FETs are incredibly simple devices and have a very basic working principle. At the heart of the transistor is a channel, which can be filled with electrons or holes. These channels are then filled with an electric current in order to control the gate voltage. When a positive voltage is applied to the gate, the channel is opened up, allowing a current to flow through the device.
The channel of the TPH3R203NL,L1Q FET is made up of two layers which form a PN junction. This junction allows the electrons to flow in one direction, while the hole-filled channel allows the electric current to flow in the opposite direction. The two channels are in constant competition, so when electric current is applied to one, the other will be closed.
The TPH3R203NL,L1Q FET is a versatile device and can be used for a wide variety of applications. It is a device that is easy to use and understand, and can be used for both analog and digital applications. This makes it an incredibly popular and widely used device.
The specific data is subject to PDF, and the above content is for reference
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