Allicdata Part #: | TPH3205WSBQA-ND |
Manufacturer Part#: |
TPH3205WSBQA |
Price: | $ 19.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 650V 35A TO247 |
More Detail: | N-Channel 650V 35A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | TPH3205WSBQA Datasheet/PDF |
Quantity: | 907 |
1 +: | $ 17.76600 |
10 +: | $ 16.43230 |
30 +: | $ 15.10010 |
120 +: | $ 14.03420 |
Vgs(th) (Max) @ Id: | 2.6V @ 700µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 400V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 8V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 22A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TPH3205WSBQA is a single message-operated triggered switch (MOSFET) that has a wide range of application fields and also a wide range of working principle. This article will discuss some of the application fields and the working principle of the TPH3205WSBQA.
The TPH3205WSBQA is commonly used in circuit switching, temperature sensing, and low-voltage operations. It can be used in many medium to high-power applications, particularly in Power, RF, and switching applications. Moreover, due to its wide range of VDS, it is suitable for use in different power stages common in audio, RF, and testing applications.
The TPH3205WSBQA is also capable of high linearity operation and can withstand high overloads. It is a reliable device to use with a low on-state resistance and low gate characteristics, even under high-lips events. The combined gate and drain characteristics of the device provide unparalleled AC operation. Additionally, the TPH3205WSBQA can also be used for enhanced power switching and low-voltage operations.
In terms of its working principle, the TPH3205WSBQA is able to switch on and off with a single voltage pulse or a message- or data-controlled signal. The triggering voltage is typically applied at the gate so that it can activate the device and in turn, the source to drain channel. The source is often connected to the ground while the drain is connected to the load, enabling the connection in a single-message-controlled operation. As soon as the gate voltage rises above a certain voltage, the MOSFET goes on, and when the gate voltage falls below the triggering voltage, the MOSFET goes off. This is essentially how the TPH3205WSBQA works, with the gate voltage controlling the state of the device in a single-message-controlled operation.
In conclusion, the TPH3205WSBQA is a versatile and reliable single message-controlled MOSFET device with a wide range of application fields and working principles. It can be used in medium to high-power applications as well as low-voltage operations. Furthermore, its combined gate and drain characteristics can provide unparalleled AC operation. Moreover, its triggering voltage is capable of being applied at the gate, to activate the device and the source to the drain channel. This is the working principle of the TPH3205WSBQA, a single-message-controlled MOSFET switch.
The specific data is subject to PDF, and the above content is for reference
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