Allicdata Part #: | TPH3206PS-ND |
Manufacturer Part#: |
TPH3206PS |
Price: | $ 7.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 600V 17A TO220 |
More Detail: | N-Channel 600V 17A (Tc) 96W (Tc) Through Hole TO-2... |
DataSheet: | TPH3206PS Datasheet/PDF |
Quantity: | 402 |
1 +: | $ 7.17570 |
10 +: | $ 6.45561 |
25 +: | $ 5.88143 |
100 +: | $ 5.30769 |
300 +: | $ 4.87733 |
600 +: | $ 4.44698 |
Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 480V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 11A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The TPH3206PS is a high-performance N-channel enhancement mode vertical double diffused MOSFET (V-DMOS) with source-drain voltage and gate voltage ratings of 500V and 16V respectively. It is designed for high voltage, high current and low-on-resistance applications while handling and dissipating a larger than normal amount of both static and dynamic power. The device is well suited for use in AC/DC gate drive circuits, polarizing relays, motor drive and other inductive large-loads applications. Additionally, TPH3206PS has a high drain-source current capability allowing for a wide operating temperature range and is constructed using a high-performance silicon carbide chip for superior performance.
The TPH3206PS device is one of the most versatile MOSFETs available. It offers an ideal combination of low on-resistance, fast switching speeds and robust packaging. The device also offers excellent noise immunity, with a high electrostatic discharge (ESD) protection rating of 20 kV HBM. Additionally, the device features a reliable latch-up protection system and is available in a hermetically sealed SOT-227 package. The performance of this device is outstanding with a threshold voltage of 1.25 V and a drain-source on-state resistance of 0.2 ohm. The device is capable of delivering up to 20 A of current and can operate at temperatures of up to 150°C.
The working principle of the TPH3206PS device is based on its high voltage characteristics. When the potential of the gate is higher than the potential of the source, the channel created by the gate is activated and electrons can flow from the source to the drain. This creates a drain-source current, more commonly known as a drain current. The amount of this drain current is proportional to the gate-source bias voltage, and the device is used in a variety of applications where a high-current path needs to be created between the source and the drain. For example, TPH3206PS devices can be used as switches for motor control, for power amplifier applications, for controlling high currents and for switching between AC/DC gate drives. Additionally, the device can be used in linear applications, audio amplifiers, or any applications that require high power delivery with low gate drive.
The TPH3206PS device is an ideal solution for a variety of applications requiring a high voltage, low on-state resistance, fast switching speeds and robust packaging. It is specifically designed to handle and dissipate large amounts of power, making it an excellent choice for AC/DC gate drive circuits, polarizing relays, motor drive and other inductive large-loads applications. Additionally, with its high electrostatic discharge (ESD) protection rating and reliable latch-up protection system, the TPH3206PS is a reliable choice for any high voltage, high current application.
The specific data is subject to PDF, and the above content is for reference
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