Allicdata Part #: | TPH3207WS-ND |
Manufacturer Part#: |
TPH3207WS |
Price: | $ 27.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 650V 50A TO247 |
More Detail: | N-Channel 650V 50A (Tc) 178W (Tc) Through Hole TO-... |
DataSheet: | TPH3207WS Datasheet/PDF |
Quantity: | 345 |
1 +: | $ 24.92280 |
10 +: | $ 23.05360 |
25 +: | $ 21.18440 |
100 +: | $ 19.68900 |
Vgs(th) (Max) @ Id: | 2.65V @ 700µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 178W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2197pF @ 400V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 32A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The TPH3207WS is a super-featured low voltage power switch designed for use in a wide range of applications. It is an advanced version of traditional MOSFETs, combining the features of a single FET with an internal switch protection. The TPH3207WS is designed for high-current switching applications and/or for use in harsh environments.
The device consists of two MOSFETs, one in the source region and the other in the gate driver, featuring a low R DS(on) and high source to drain breakdown voltage. The built-in feature of the device includes switch protection in terms of limiting the on-state voltage and current. This feature is useful when the device is used in a high voltage environment.
The TPH3207WS is applicable in both commercial as well as industrial control applications. It is used in a variety of process control equipment and also as a protection device in power distribution systems. The device can also be used as a switch element in battery powered products requiring long battery life. The device has an excellent thermal performance and can sustain a high-current load.
The working principle of the TPH3207WS is based on the concept of MOSFET. A MOSFET is a special semiconductor device which uses metal–oxide–semiconductor technology to control current flow in a circuit. It consists of a metal–oxidesheet and a semiconductor substrate, called the gate. When a voltage is applied to the gate, it modifies the electron charge on the substrate and thus controls the voltage, resistance, and current flow internally.
The TPH3207WS uses the metal–oxide–semiconductor technology to control current, by adjusting the gate voltage. The gate voltage acts as a switch and is used to control the on/off state of current. The gate voltage is usually adjusted by an external circuit, such as a voltage regulator, or a driver. This is done by applying a voltage to the gate, which controls the resistance of the channel and thus the current. The internal protection feature of the device helps to protect the device from over-current and over-voltage.
The TPH3207WS is an excellent low voltage power switch offering great design flexibility and feature set. It is ideal for applications in commercial and industrial control, as well as a switch element in battery operated products. Its additional switch protection helps to prevent over-current/over-voltage. The device offers excellent thermal performance, allowing it to sustain a high-current load.
The specific data is subject to PDF, and the above content is for reference
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