Allicdata Part #: | TPH3206LDB-ND |
Manufacturer Part#: |
TPH3206LDB |
Price: | $ 7.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 650V 16A PQFN |
More Detail: | N-Channel 650V 16A (Tc) 81W (Tc) Surface Mount PQF... |
DataSheet: | TPH3206LDB Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 6.77263 |
Vgs(th) (Max) @ Id: | 2.6V @ 500µA |
Package / Case: | 4-PowerDFN |
Supplier Device Package: | PQFN (8x8) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 81W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 480V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The TPH3206LDB is a single MOSFET device in a PDSO8 package which stands for PowerPAK SO-8. It is a vertical double-diffused D-MOS device with an inherently low on-state resistance and high drive capability.
MOSFETs are used in a variety of applications today ranging from power switching, motion control, and high-power amplifier design. The TPH3206LDB features an on-resistance of approximately 4 milli-ohms at 10V and an RDS(ON) of 0.15 ohm at 4.5V. It is specifically designed to provide excellent EMI performance and enhanced efficiency in applications requiring tight control of power dissipation and noise.
The TPH3206LDB is typically used as a load switch or as part of a power management circuit. It can be used to switch power on and off and it can also be used to regulate current and voltage in high power supply designs. The device is well-suited for use in battery-powered products, as well as lighting applications, and consumer electronics. Its low on-state resistance offers lower power losses and improved efficiency compared to other MOSFETs.
The basic working principle of the TPH3206LDB is that it uses back-gate voltage to control the flow of current between its gate and source terminals. When the voltage at the gate terminal is higher than the source terminal, it allows current to pass between the two terminals. When the voltage at the gate terminal is lower than the source terminal, no current can pass between the two terminals.
When the voltage at the gate terminal is set at a negative voltage, it creates an electrically “silent” MOSFET, meaning that the MOSFET is in a non-conductive state, allowing no current to flow. By adjusting the gate voltage, an external circuit can control the on or off state of the MOSFET.
The TPH3206LDB can also be used to amplify an electrical signal. When the negative gate voltage is applied, it creates an electrical barrier between the gate and source, preventing current from passing. When the gate voltage is changed to a positive voltage, current can flow between the two terminals depending on the magnitude of the voltage.
It is this ability to control current flow which makes the TPH3206LDB valuable for many applications. High power supplies, lighting systems, and battery powered products can all benefit from the use of this MOSFET device. It offers improved efficiency, lower power losses, and heightened noise control.
The specific data is subject to PDF, and the above content is for reference
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