Allicdata Part #: | TPH3208LD-ND |
Manufacturer Part#: |
TPH3208LD |
Price: | $ 7.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 650V 20A PQFN |
More Detail: | N-Channel 650V 20A (Tc) 96W (Tc) Surface Mount PQF... |
DataSheet: | TPH3208LD Datasheet/PDF |
Quantity: | 1000 |
240 +: | $ 6.56762 |
Vgs(th) (Max) @ Id: | 2.6V @ 300µA |
Package / Case: | 4-PowerDFN |
Supplier Device Package: | PQFN (8x8) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 400V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 13A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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A TPH3208LD is a type of vertical P-channel MOS field effect transistor (FET). This transistor is commonly used in low voltage power switch integrated circuits, low-power DC-to-DC converters, and load control circuits due to its low on-resistance and low capacitance. It is also used in switching regulators and power supply controllers.
The TPH3208LD is a monolithic N-channel enhancement mode MOSFET, with a built-in Zener negative gate to source voltage structure, and has a very low circuit RDS (ON) value. This gives it higher efficiency than other types of MOSFETs. The low on-resistance and low capacitance of this type of MOSFET make it suitable for controlling high-frequency AC components, such as switching regulators and power supply controllers.
The TPH3208LD is used in a variety of applications, including: switching regulators, DC-to-DC converters, power supply controllers, load controllers, and power supplies. The application areas of this type of MOSFET are usually related to the low RDS (ON) value and the low capacitance of the device.
The working principle of the TPH3208LD is quite simple. When a positive voltage is applied to the gate of the device, an electric field is created between the source and the drain, which attracts electrons from the source to the drain, creating a current channel between the two regions. The amount of current that can flow through this channel is determined by the RDS (ON) value and the voltage applied to the gate. When the voltage applied to the gate becomes too great, the device shuts off, and no longer passes current.
In addition to the RDS (ON) and voltage, the junction capacitance and the threshold voltage of the device are also important factors in determining its performance. The junction capacitance represents the amount of electrical energy that must be stored in order to switch the device off. The threshold voltage is the minimum gate-to-source voltage required to turn the device on.
Overall, the TPH3208LD is a powerful, efficient, and reliable MOSFET offering superior performance for applications requiring low-voltage power, load control, and power conversion. It is designed to provide excellent thermal performance and minimum RDS(ON), making it an excellent choice for a wide range of applications. The low capacitance, low on-resistance, and low threshold voltage provide it with excellent performance characteristics.
The specific data is subject to PDF, and the above content is for reference
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