Allicdata Part #: | TPH3208LDG-ND |
Manufacturer Part#: |
TPH3208LDG |
Price: | $ 9.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | MOSFET N-CH 650V 20A PQFN |
More Detail: | N-Channel 650V 20A (Tc) 96W (Tc) Surface Mount PQF... |
DataSheet: | TPH3208LDG Datasheet/PDF |
Quantity: | 416 |
1 +: | $ 8.87670 |
10 +: | $ 7.98777 |
60 +: | $ 7.27762 |
120 +: | $ 6.56762 |
300 +: | $ 6.03508 |
540 +: | $ 5.50258 |
Vgs(th) (Max) @ Id: | 2.6V @ 300µA |
Package / Case: | 3-PowerDFN |
Supplier Device Package: | PQFN (8x8) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 400V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 13A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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TPH3208LDG is an advanced application field and working principle transistor product by UMC (United Microelectronics Corporation). It is a high-speed N-Channel MOSFET transistor which is designed for high-side application with high performance requirements. It provides superior power efficiency thanks to its superior design and power management technology. Moreover, it provides a wide range of supply voltage (4.5V ~ 20V), and low on-resistance value. The outline of this paper is to discuss the application field and working principle of TPH3208LDG.
The TPH3208LDG is suitable for various power management applications such as battery and adapter management, general-purpose power control, solar power management, automotive power management, and other or AC/DC smart power control applications. In addition, this chip is also suitable for a wide range of application scenarios, including lighting and industrial equipment.
The TPH3208LDG can be used in various switching scenarios: high-side switching, reverse polarity protection, supply voltage rising and sinking, power-on reset systems, current limited MOSFET switching, and many more.
The footprint size of the TPH3208LDG is very small, which makes it suitable for SMD applications as well. With the small size and wide operating voltage range, it can be used in virtually any design requiring power control, making it an ideal choice for many applications.
The TPH3208LDG is a single N-Channel MOSFET transistor. It is a voltage-controlled device, and works by the gate voltage controlling the current flow between the source and drain terminals. When the gate voltage is at low level, the MOSFET is open and will not conduct current. When the gate voltage is increased, the MOSFET will start conducting current, and the channel between drain and source will be created. This is done by ‘turning on’ the MOSFET transistor.
The maximum on-resistance value of the TPH3208LDG is small, which makes it able to switch high load current with low conduction loss. The breakdown voltage of the device is also extremely high, which ensures that it can operate in effectively wide operating range while achieving high reliability.
To conclude, the TPH3208LDG is a single N-Channel MOSFET transistor which can be used in a wide range of applications, including power management, automotive power management, reverse polarity protection, lighting and industrial equipment. The device is supplied with a wide range of supply voltage (4.5V ~ 20V), and has a low on-resistance value. The working principle of the TPH3208LDG is based on the voltage controlling the current flow between the source and drain terminals.
The specific data is subject to PDF, and the above content is for reference
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