TSM085P03CV RGG Allicdata Electronics
Allicdata Part #:

TSM085P03CVRGGTR-ND

Manufacturer Part#:

TSM085P03CV RGG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET P-CH 30V 64A 8PDFN
More Detail: P-Channel 30V 64A (Tc) 50W (Tc) Surface Mount 8-PD...
DataSheet: TSM085P03CV RGG datasheetTSM085P03CV RGG Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PDFN (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3234pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TSM085P03CV RGG is a power MOSFET designed for general-purpose switching applications. It has a high drain-source breakdown voltage of 50V and a low gate-source threshold voltage of 4V. It has a maximum continuous drain current of 5A and a maximum drain-source on-state resistance of 0.062Ω.

The TSM085P03CV RGG is suitable for use in power management and control applications such as DC-DC converters, DC-AC converters, battery chargers and power supplies. It is a single N-channel enhancement mode device that operates by applying a voltage to the gate terminal. The number of transistors required for operation can vary depending on the intended application.

The TSM085P03CV RGG is a vertical double-diffused MOSFET (VDMOS) transistor. It has a three-terminal structure consisting of the source, drain and gate terminals. The source and drain terminals connect to the drain and source regions, respectively. The gate terminal is connected to the gate oxide layer, which is formed between the two regions. The oxide layer controls the current flow between the two terminals.

When an external voltage is applied to the gate terminal, it creates an electric field which causes charge carriers (electrons or holes) to form in the channel. This in turn increases the conductivity of the channel, allowing current to flow from the source to the drain. Therefore, by controlling the voltage applied to the gate, the current flow can be controlled.

The TSM085P03CV RGG is designed for a wide range of voltage and current applications. It is capable of operating at frequencies up to 100kHz, making it suitable for high-speed applications. It features a high thermal resistance, enabling it to handle high power levels without overheating. In addition, the TSM085P03CV RGG is protected against electrostatic discharge and has low output capacitance, making it ideal for analog circuits.

In conclusion, the TSM085P03CV RGG is a power MOSFET designed for general-purpose switching applications, such as DC-DC converters, DC-AC converters, battery chargers and power supplies. It is capable of operating at high frequencies and can handle high power levels without overheating. Additionally, it offers protection against electrostatic discharge and has low output capacitance, making it suitable for use in analog circuits.

The specific data is subject to PDF, and the above content is for reference

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