TSM052N06PQ56 RLG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PDFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3686pF @ 30V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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TSM052N06PQ56 is a N-channel MOSFET that is ideal for high speed switching operation. The TSM052N06PQ56 is an advanced power MOSFET, with an on-resistance of 52 mΩ, fast switching, and low gate charge.The RLG application field for this MOSFET is wide. It can be used in a variety of switching and level shifting applications, from automotive to consumer electronics. It is well suited for synchronous rectification and high-side switching, as well as for low-side switching in buck converters and portable electronic device applications.This MOSFET is specifically designed to reduce power loss and improve efficiencies in electronic switch applications. It can be used for bidirectional switching applications and has a very low on-resistance of 52 milli-ohms (mΩ). This makes it ideal for high-speed switching applications. The fast switching of this MOSFET makes it well suited for applications such as DC-DC converters and switch mode power supplies.How does TSM052N06PQ56 work? It works in a four-layer form, which is better known as the Field-Effect Transistor (FET). The high-speed switching operation and efficiency of the MOSFET is due to its basic working principle.The transistor is made of four layers, a source, a drain, a gate, and a substrate. A positive voltage applied to the gate creates an electric field around the gate, which generates an inversion layer and alters the electric field between the source and the drain. This alteration in the electric field creates the current flow between the drain and the source.The speed at which the transistor can switch is determined by the gate capacitance. The capacitance of the gate affects the time it takes for the voltage on the gate to rise or fall, and therefore affects the switching time of the FET; the smaller the gate capacitance, the faster the FET can switch. The TSM052N06PQ56 has low gate capacitance, which makes it suitable for high speed switching.Another advantage of this MOSFET is the low drain to source on-resistance. This helps to reduce the power loss due to conduction in the MOSFET. The TSM052N06PQ56 has an on-resistance of 52 mΩ, which helps to reduce the power loss in the switch.In summary, the TSM052N06PQ56 is an advanced power MOSFET, designed for high speed, low power loss applications. It has a low on-resistance of 52 mΩ, fast switching and low gate charge, making it ideal for high-speed switching, synchronous rectification, and DC-DC converter applications.

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