TSM024NA04LCR RLG

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PDFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4224pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	67nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	170A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The TSM024NA04LCR RLG is a high-efficiency, high riding MOSFET developed by Texas Instruments. It is a low cost, high power device that offers a cost effective and reliable solution for power management applications. The device can be used for a variety of applications, such as high-side switching, linear regulation, fast switching, and PWM control. This article will explore the application field of this device, as well as its working principle.

Application Field

The TSM024NA04LCR RLG is a high performance and low cost MOSFET. It is mainly used in power management applications, such as high-side switching, linear regulation, fast switching, and PWM control. It can also be used in battery management systems, switch-mode DC/DC converters, motor drives, battery chargers, and general-purpose switching circuits. It provides excellent efficiency and low-level noise, making it ideal for these applications.

Features

The TSM024NA04LCR RLG features a high-voltage rating of 1300 V and a maximum drain current of 4.5 A. It also provides a low on-resistance of 3.2 mΩ. This low resistance enables the device to provide high-efficiency switching, which is necessary for power management applications. It also features very low gate charge and low gate-drain coupling capacitance, which make it suitable for fast switching applications.

Working Principle

The TSM024NA04LC RLG is a MOSFET, or a Metal Oxide Semiconductor Field Effect Transistor. It is capable of acting as a switch, allowing an electrical current to be switched on and off. The device works by allowing electrons to be transported between two or more electrodes, or terminals. The source terminal is connected to the source of the electrical current and the drain terminal is connected to the drain of the electrical current. The gate terminal is connected to the control voltage, which can be either positive or negative. When the control voltage is applied to the gate terminal, it causes the transistor to switch on and allows the current to flow from the source to the drain. When the control voltage is removed, the transistor switches off and the current is blocked.

Conclusion

The TSM024NA04LCR RLG is a high-efficiency, low-cost MOSFET developed by Texas Instruments. It is mainly used in power management applications, such as high-side switching, linear regulation, fast switching, and PWM control. The device features a high-voltage rating of 1300 V and a maximum drain current of 4.5 A, and also provides a low on-resistance of 3.2 mΩ. The working principle of this device is based on the behavior of electrons in a MOSFET, where a control voltage applied to the gate terminal allows current to flow from the source to the drain.

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