TSM2301CX RFG

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IntroductionThe TSM2301CX RFG is a robust, four terminal single N-channel enhancement power mosfet. This N-channel power mosfet is specifically designed to support a wide range of RF applications, offering an excellent combination of low on-resistance, high power dissipation and attainable gain, making it ideal for applications such as low power switching, voltage control, high frequency power amplifiers, low noise amplifiers and wideband power amplifiers.

ApplicationThe TSM2301CX RFG is used in a variety of radio frequency (RF) applications such as low power switching, voltage controlled amplifiers, low noise amplifiers, high frequency power amplifiers, wideband power amplifiers, high frequency transmitters, receivers and oscillators. This N-Channel power mosfet is also particularly suitable for low voltage, low Quiescent Current (QC) drain applications and for applications where a high level of functionality is desired.

Working principleThe TSM2301CX RFG works on the principle of N-Channel Field Effect Transistor (FET). This is an active component whose electrical characteristics are controlled by a gate voltage. This gate voltage can be applied to change the resistance between the source and drain of the mosfet. This creates a channel that can conduct electrons between the source and drain. The current between the drain and source will depend on the voltage applied to the gate, which can be controlled to vary the current in the channel. The resistivity of the device can also be varied with the drain to source voltage.

The TSM2301CX RFG feature an enhanced N-Channel enhancement mode power mosfet that is particularly suitable for applications where a high level of functionality is desired. The device is available in a range of threshold and temperature variations. It is possible to control the channel between the source and drain as the gate voltage is varied, thus providing linear control of the FET for audio and RF applications.

The TSM2301CX RFG has a rated drain to source current of 1A with a voltage rating of 80V. The device is fabricated using the latest high performance N-Channel process technology and is packaged in a miniature SOT-23-5 package. The device is rated for a maximum dissipation of 1.85W at 25oC.

ConclusionThe TSM2301CX RFG is a single N-channel enhancement power mosfet specifically designed for a wide range of RF applications. It offers excellent on-resistance, power dissipation and attainable gain, making it an ideal choice for low power switching, voltage control, high frequency power amplifiers, low noise amplifiers and wideband power amplifiers. The device is available in a variety of threshold and temperature variations and is suitable for applications where a high level of functionality is desired. The TSM2301CX RFG is packaged in a miniature SOT-23-5 package.

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