TSM2N100CP ROG

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	77W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	625pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.5 Ohm @ 900mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.85A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The TSM2N100CP ROG (resonant-gate) is one of the most commonly available and widely used MOSFETs (metal–oxide–semiconductor field-effect transistors). It is the latest innovation in the ROG family of MOSFET technology, making it one of the most widely used transistors in the world. This MOSFET provides higher power handling capability, greater switching speed and lower on-state resistance than conventional MOSFET-based transistors. It is also highly reliable and can operate reliably in harsh environments such as extreme temperature, high humidity and vibration.The TSM2N100CP ROG is a so-called \'Three Terminal\' device, meaning it contains three contact regions – the gate, drain and source. These three contact regions control the current flow through the MOSFET transistor. The TSM2N100CP’s gate terminal is connected to the control current, which determines if the MOSFET will conduct or block current through its source-drain channel. When the gate voltage is zero, the transistor is in the off-state and no current flows. When the gate voltage is greater than or equal to the threshold voltage, the device will be in the on-state and current will flow.The TSM2N100CP ROG has two key characteristics that are important to its operation. The drain-source On-Resistance is the amount of voltage drop across the source and drain terminals when the device is fully switched on. The gate-source capacitance is defined as the amount of charge stored on the gate capacitance when a voltage is applied to the gate. The gate capacitance determines how quickly the MOSFET can be “switched on” and “switched off” in order to control current flow through the gate.The TSM2N100CP ROG is a very versatile device and is used in a variety of applications across many industry sectors. It is often used in power converters, motor drives, solar inverters, and industrial controls. It is also used in lighting and power management products, power supplies and voltage regulators, and vibration and frequency inverters. Its versatility and low power consumption make it an ideal choice for many high-power applications where efficiency and power control are essential.One of the main advantages of the TSM2N100CP ROG is its low power losses. Its low On-Resistance rating makes it one of the lowest power loss MOSFETs available. This makes it an attractive choice for applications that require high efficiency and low power losses, such as in battery charger circuits and DC-DC converters. Its high switching speed, controllable on-state resistance, and low power loss make it an ideal choice for high speed switching applications such as switching power supply designs. Additionally, its high voltage rating and high current rating makes it well suited for use in motor drives and other high current applications.The TSM2N100CP ROG is also a reliable device and its lower dielectric absorption characteristics make it a great choice for applications where reliability is key. Its low thermal resistance and low gate-source capacitance make it highly compatible with high speed semiconductor switching designs and its high gate-source capacitance rating makes it suitable for high voltage and high current applications. The TSM2N100CP ROG is a great choice for any application requiring a reliable, high performance transistor.

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