UNR91A0G0L Allicdata Electronics

UNR91A0G0L Discrete Semiconductor Products

Allicdata Part #:

UNR91A0G0LTR-ND

Manufacturer Part#:

UNR91A0G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR91A0G0L datasheetUNR91A0G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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The UNR91A0G0L is a low voltage, general purpose, NPN transistor. It is part of a family of pre-biased transistors called Single, Pre-Biased (SPB) transistors, which are pre-biased devices that can be used to quickly and easily design and implement efficient DC to DC converters or generate pulses for high speed switching. This low-voltage transistor has a maximum collector current of 250mA and can operate from a supply voltage as low as 4V.

The UNR91A0G0L is an NPN transistor, which means it is based on the arrangement of three layers of semiconductor material. One layer is made from silicon, which is the main component; the second and third layers are made of boron and phosphorus, respectively. These three layers form the basis for how the transistor works. NPN transistors use the flow of current through the base-emitter junction to create a larger current flow through the collector-emitter junction.

The UNR91A0G0L has several features that make it attractive for a variety of applications. It has a high switching speed, low on-resistance, low power dissipation, and minimal cross-conduction. Additionally, its low VCE(sat) ensures that it operates at low voltage and its low gate charge ensures that there is no back biasing necessary to operate the device. Its low saturation voltage also allows it to be used with tiny gate drivers and simple gate circuits.

In addition to its electrical characteristics, the UNR91A0G0L has a wide variety of application fields. It is used in a variety of switching applications, such as DC to DC converters, motor drivers, and high speed switching. It can also be used in power supplies, lighting control, and automotive applications. The device is also suited for use in a host of other applications, including battery chargers, power amplifiers, communication systems, and RF circuits.

The UNR91A0G0L has two primary working principles. It functions as an amplifier, using the input-output characteristics of the base-collector junction. This amplifies the current passing through the device. It also functions as a switch, using the on-state resistance of the collector-emitter junction to switch devices on and off. The transistor is uniquely pre-biased so that it can be used instantly without the need for any external sources or current injections.

In summary, the UNR91A0G0L is a low voltage, general purpose, NPN transistor. It is part of a family of SPB transistors, which are pre-biased devices that can be used to quickly and easily design and implement efficient DC to DC converters or generate pulses for high speed switching. The transistor has a wide variety of application fields and two primary working principles, making it an attractive choice for many applications. It can be used with tiny gate drivers and simple gate circuits, and its low on-state resistance and low saturation voltage ensure that it operates with low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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