UNR91A5G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR91A5G0LTR-ND |
Manufacturer Part#: |
UNR91A5G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 125MW SSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR91A5G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR91A5G0L is a single-bipolar (BJT) pre-biased transistor that is known for its reliable performance and flexible features. This type of transistor is commonly used in a variety of electronics applications, such as power management, signal conditioning, and data conversion. It has been designed to work with both single- and multi-phase DC supplies and is capable of regulating high current demands while still providing accurate tracking of the input voltage. In addition, the UNR91A5G0L also has several built-in protection features, such as over-current level protection and reverse polarity protection.
The working principle of the UNR91A5G0L is based on a self-biased emitter-follower circuit. This type of circuit is designed to provide a stable output voltage that is independent of supply voltage and load resistance. The circuit works by employing a base resistor which controls the voltage at the base of the transistor and a feedback resistor which helps to regulate the output voltage. The integrated transistor includes a unique current mirror that reduces the effects of thermal runaway and helps to improve the performance of the circuit.
The UNR91A5G0L features a low impedance input section and a high impedance output section. This allows it to be used in a variety of applications, including signal conditioning and data conversion. The transistor also includes a low-noise signal path which helps to reduce the effect of electrical noise on the signal. Furthermore, the transistor features an integrated temperature sensor that helps to ensure accurate signal control across a wide temperature range.
The UNR91A5G0L is designed to be used with a single- or multi-phase DC supplies. The single-phase DC supply is connected to the base of the transistor while the multi-phase DC supply is connected to the emitter. This allows the transistor to work in either a stand-alone, multi-phase, or a combination single and multi-phase supply. In addition, the device can also be used in a bridge mode, where it operates as a voltage follower.
The UNR91A5G0L is also designed to provide a wide range of protection features. These features include over-current level protection, reverse polarity protection, and NTE thermal shut-down. The over-current level protection helps to protect the device from being subjected to over-current demands, while the reverse polarity protection helps to protect the device from damaging effects caused by reversed voltage polarities. The NTE thermal shut-down also helps to protect the device from prolonged exposure to high temperatures.
The UNR91A5G0L is a highly reliable transistor that is designed for a variety of applications. This device is known for its stable performance and flexible features and can be used in both stand-alone and bridgemode applications. In addition, the device features an integrated current mirror and temperature sensor which help to improve its performance and protect the device from damaging effects caused by extreme temperatures and over current demands.
The specific data is subject to PDF, and the above content is for reference
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UNR9213J0L | Panasonic El... | 0.0 $ | 1000 | TRANS PREBIAS NPN 125MW S... |
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