UNR9116G0L Allicdata Electronics

UNR9116G0L Discrete Semiconductor Products

Allicdata Part #:

UNR9116G0LTR-ND

Manufacturer Part#:

UNR9116G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 125MW SSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR9116G0L datasheetUNR9116G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Description

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The UNR9116G0L (Silicon NPN Transistor) is a singly-biased, pre-biased, NPN junction transistor specifically designed to be used in surge protection applications. It is one of the most widely used transistors for this purpose and is manufactured in both small and large-scale process technologies.

The UNR9116G0L is a versatile transistor which is used in a variety of applications including:

  • Power supply surge protection.
  • Back-to-back automotive relays.
  • Switching regulator protection.
  • DC motor surge protection.
  • Battery charger protection.

The transistor is a three terminal device comprising of an emitter, collector and base junction. The UNR9116G0L is pre-biased meaning that one of the junctions has already been given a voltage while the other two junctions are free to be connected. This pre-biased design helps to ensure an equivalent junction which optimizes the device’s performance.

The working principle of the UNR9116G0L is an example of basic transistor operations. It works by ways of the injection of minority carriers (electrons or holes) across the p-n junction from the emitter to the collector terminal. When a forward bias is applied, electron gain is increased allowing current to flow from the emitter to the collector. This results in the transistor acting as a switch as the collector current can be made to switch between high and low levels when the base voltage is adjusted. This setup is known as a common-emitter circuit.

When the UNR9116G0L is used in the surge protection application, it is wired in a specific configuration which maximizes its performance. In this configuration two resistors of specific values are connected between the collector and base junction, while the emitter is connected to ground. The resistors act as voltage dividers, allowing current to be injected into the base terminal and varying the voltage across the collector and emitter junction. This current is used as an indicator of the surge current which is then coupled to a load. The device acts as a switch and when the surge current exceeds the rated value the collector will switch off to protect the load.

The UNR9116G0L is a commonly used transistor for surge protection applications due its versatility and robust design. It is a great example of how a simple transistor can be used to provide an effective means of protection against over- current and over-voltage in circuitry.

The specific data is subject to PDF, and the above content is for reference

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