UNR911NJ0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SSMini3-F1

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The UNR911NJ0L is a single pre-biased bipolar junction transistor (BJT) used in many applications. It is used in amplifier circuits and voltage regulator circuits. It can be used to replace several bipolar junction transistors in a circuit. It is also used in RF applications, such as oscillator circuits.The UNR911NJ0L is available in a wide variety of packages and configurations. Examples include a plastic three-lead package, a surface-mount package, a TO-220 package, and a TO-126 package.The UNR911NJ0L is a three-terminal device. It has three pins, namely base, collector and emitter. The base terminal serves as the control element of the device. It is used to control the flow of current between the collector and the emitter. The collector terminal is connected to the source of current, while the emitter terminal is connected to the load.The UNR911NJ0L is a pre-biased device. This means that the collector and emitter terminals are biased before it is connected to the circuit. This ensures that the device behaves in a predictable fashion. This reduces the number of parameters that have to be taken into consideration for the design of the circuit.When biased, the device behaves as a current controlled device. When the base voltage is increased, the current flowing between the collector and emitter terminals increases. The magnitude of the increase in current depends on the amount of the bias voltage applied.The UNR911NJ0L is used in many applications because of its good performance characteristics. It has a high gain at high frequencies, which makes it suitable for use in RF applications. It is also fast switching and has a good linear response. In addition, the UNR911NJ0L is very power efficient. It generates very low levels of noise and distortion, so it is suitable for use in audio and video systems. The UNR911NJ0L can be operated in two different modes. The first mode is the common-emitter (CE) configuration. In this configuration, the current from the collector to the emitter is amplifying the signal. The second mode is the common-base (CB) configuration. In this mode, the voltage from the collector to the base is amplified. In conclusion, the UNR911NJ0L is an affordable and reliable device suitable for many applications. It is a pre-biased single bipolar junction transistor which has many advantages such as high gain at high frequencies and low levels of noise and distortion. It can be operated in both the common-emitter and common-base configurations.

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