Cap alum 600uf 20% 200v flatpack - Allicdata Electronics

Related Categories

< 1 2 3 4 5 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
497-5168-5-ND	STW30N20	STMicroelectronics	View more Series: STripFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $0
IXTK120P20T-ND	IXTK120P20T	IXYS	View more Series: TrenchP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	1000 Order	25+: $12.8462
2N6790U-ND	2N6790U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	1000 Order	1+: $0
IRFSL4127PBF-ND	IRFSL4127PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 72A (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1000+: $1.8727
2N6790-ND	2N6790	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
2N7225U-ND	2N7225U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	1000 Order	1+: $0
IXTX120P20T-ND	IXTX120P20T	IXYS	View more Series: TrenchP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V Mounting Type: Through Hole Supplier Device Package: PLUS247-3 Package / Case: TO-247-3	1000 Order	30+: $12.7722
IPC302N20N3X1SA 1-ND	IPC302N20N3X1SA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 260A Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	1000 Order	4425+: $2.3885
497-5129-5-ND	STP30N20	STMicroelectronics	View more Series: STripFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
2SK2221-E-ND	2SK2221-E	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
2N6758-ND	2N6758	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	1000 Order	1+: $0
IXTN79N20-ND	IXTN79N20	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 85A (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Power Dissipation (Max): 400W (Tc) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	1000 Order	10+: $22.9604
BS107PSTOB-ND	BS107PSTOB	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 5V Vgs (Max): 20V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
ZVP0120AS-ND	ZVP0120AS	Diodes Incorporated	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 110mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32 Ohm @ 125mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Power Dissipation (Max): 700mW (Ta) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	1+: $0
ZVN3320A-ND	ZVN3320A	Diodes Incorporated	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power Dissipation (Max): 625mW (Ta) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	3059 Order	1+: $0.5292 10+: $0.4662 100+: $0.3575 500+: $0.2826 1000+: $0.226
ZVNL120C-ND	ZVNL120C	Diodes Incorporated	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Power Dissipation (Max): 700mW (Ta) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	1+: $0
BS107P-ND	BS107P	Diodes Incorporated	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 5V Vgs (Max): 20V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	30195 Order	--
BS107PSTOA-ND	BS107PSTOA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 5V Vgs (Max): 20V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	1000 Order	1+: $0
2N6766-ND	2N6766	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	1000 Order	--
IXTA32N20T-ND	IXTA32N20T	IXYS	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	50+: $1.4309
IRFSL4620PBF-ND	IRFSL4620PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Power Dissipation (Max): 144W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRL640PBF-ND	IRL640PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	840 Order	--
IRLS640AFS-ND	IRLS640A	ON Semiconductor	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 180 mOhm @ 4.9A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1705pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	2 Order	--
IRFI640GPBF-ND	IRFI640GPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	894 Order	--
FQP19N20FS-ND	FQP19N20	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 19.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	399 Order	--
FQA34N20-ND	FQA34N20	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Power Dissipation (Max): 210W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	--
SUP90142E-GE3-N D	SUP90142E-GE3	Vishay Siliconix	View more Series: ThunderFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 31200pF @ 100V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	240 Order	1+: $2.3814 10+: $2.1281 100+: $1.7452 500+: $1.4131 1000+: $1.1918
IXFP90N20X3-ND	IXFP90N20X3	IXYS	View more Series: HiPerFET Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V Power Dissipation (Max): 390W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	178 Order	1+: $4.1769 50+: $3.358 100+: $3.0596 500+: $2.4775 1000+: $2.0895
IXFK220N20X3-ND	IXFK220N20X3	IXYS	View more Series: HiPerFET Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V Power Dissipation (Max): 960W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	25 Order	1+: $10.836 25+: $9.1144 100+: $8.3752
IRFR220NCPBF-ND	IRFR220NCPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Power Dissipation (Max): 43W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
2N6784-ND	2N6784	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2.25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
SKP202VR-ND	SKP202VR	Sanken	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 53 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Power Dissipation (Max): 95W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $1.4562
IXTP32P20T-ND	IXTP32P20T	IXYS	View more Series: TrenchP Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	50+: $3.9123
FQU10N20CTU-ND	FQU10N20CTU	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	4040 Order	--
BUZ31H3045ATR-N D	BUZ31 H3045A	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 14.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V Power Dissipation (Max): 95W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.6424
MMFT107T1OSDKR- ND	MMFT107T1	ON Semiconductor	View more Packaging: Digi-Reel Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 250mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power Dissipation (Max): 800mW (Ta) Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
IRFS4020PBF-ND	IRFS4020PBF	Infineon Technologies	View more Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
APT20M19JVR-ND	APT20M19JVR	Microsemi Corporation	View more Series: POWER MOS V Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 112A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 11640pF @ 25V Power Dissipation (Max): 500W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP Package / Case: SOT-227-4, miniBLOC	1000 Order	1+: $0
FDP2614FS-ND	FDP2614	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 27 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 7230pF @ 25V Power Dissipation (Max): 260W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1835 Order	--
FDD10N20LZTMTR- ND	FDD10N20LZTM	ON Semiconductor	View more Series: UniFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2500 Order	--

< 1 2 3 4 5 >

Hot Searches: cap alum 600uf 20% 200v flatpack cap alum 600uf 20% 100v flatpack cap alum 600uf 20% 150v flatpack cap alum 190uf 20% 200v flatpack cap alum 280uf 20% 200v flatpack cap alum 380uf 20% 200v flatpack cap alum 490uf 20% 200v flatpack cap alum 680uf 20% 200v flatpack cap alum 820uf 20% 200v flatpack cap alum 720uf 20% 200v flatpack cap alum 400uf 20% 200v flatpack cap alum 330uf 20% 200v flatpack cap alum 600uf 20% 2.5v smd cap alum 600uf 20% 6.3v smd cap alum 600uf 30v axial cap alum 600uf 20v axial cap alum 600uf 400v radial cap alum 600uf 500v snap cap alum 600uf 50v radial cap alum 600uf 75v screw

Search Result:cap alum 600uf 20% 200v flatpack

Related Categories