Allicdata Part #: | IXTP32P20T-ND |
Manufacturer Part#: |
IXTP32P20T |
Price: | $ 4.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 200V 32A TO-220 |
More Detail: | P-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXTP32P20T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.91230 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14500pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
Series: | TrenchP™ |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP32P20T is a single N-channel MOSFET transistor designed to be used in a variety of power electronic applications. The device is capable of handling both high- and low-voltage applications, operating at voltages up to 700V and up to 15A current. It is designed to be used in both linear and switch mode applications and is suitable for a range of power conversion and switching circuits.
This N-channel MOSFET features a very low on-resistance of about 0.4 ohms and a low gate capacitance design. This allows it to be used for fast switching applications and provides a low dissipation factor. The device is available in three versions, including a TO-220 package, a TO-251 package, and a TO-252 package. All three versions are designed to offer high performance and are suitable for both commercial and industrial applications.
The working principle of the IXTP32P20T is that of a conventional MOSFET transistor. A MOSFET is a type of field-effect transistor which operates on the principle of a gate voltage controlling the amount of current flowing through a resistor, the drain-to-source resistance (Rdson). When the gate voltage of the MOSFET is increased, the resistance of the channel connecting the source and the drain decreases, allowing more current to flow.
The IXTP32P20T is mainly used in applications such as motor control, frequency convertors and DC-DC conversions. This device can also be used in high-power conversion applications that require high efficiency, such as in LED lighting systems. The device is also suitable for use in automotive applications, such as power steering, electronic power steering and active suspension systems. The device is also used in applications requiring high-frequency switching, such as cell phone battery chargers.
In automotive applications, the IXTP32P20T can be used to control the flow of current in a circuit by applying a voltage to its Gate pin. This voltage can be controlled by the user or by the computer, allowing for precise and accurate control over the amount of current that is flowing through the circuit. This device can also be used for protection against over-voltage or under-voltage conditions by controlling the Gate pin. This device is also used in solar panels and power supplies, providing over-voltage protection and reducing the power consumption of the electrical system.
The IXTP32P20T device is an ideal solution for a wide range of power-related applications, offering high performance and reliability. With its low Rdson, low capacitance design and high power ratings, this device is suitable for a wide range of power conversion and switching applications. It is capable of handling high- and low-voltage applications and is suitable for both commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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