
Allicdata Part #: | IRFR220NCPBF-ND |
Manufacturer Part#: |
IRFR220NCPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 5A DPAK |
More Detail: | N-Channel 200V 5A (Ta) 43W (Tc) Surface Mount D-Pa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFR220NCPBF is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that has been specially designed to handle large amounts of electricity flows. It is ideal for high current applications and provides excellent thermal management characteristics and low gate charge performance. Its great compatibility with other components makes it a popular choice for both large and small circuit systems.
Applications for IRFR220NCPBF can range from motor controls, load controllers, and regulator systems to audio amplifiers, power supply systems and power converters. In addition, its high image-rejection ratio and low threshold makes it suitable for amplifier circuits, as well as switching-mode power supplies and flyback converters.
As an MOSFET, IRFR220NCPBF works by allowing current to flow through the two source-drain channels as an electric field is applied to the gate terminal. When the gate is off, a larger reverse bias voltage is required to turn the current on and off. When the gate is on, the current in the two channels is determined by the relative voltages applied to the gate terminal. With the IRFR220NCPBF, this threshold can be as low as 4V.
In comparison to other FETs and MOSFETs, IRFR220NCPBF has an excellent thermal and low gate charge performance. It can handle high drain-source voltages up to 100V, is able to dissipate up to 175W, and can reach current ratings up to 17A. It is compatible with most industry-standard integrated circuits and its built-in junction protection makes it suitable for a wide range of applications.
IRFR220NCPBF’s excellent electrical characteristics and thermal properties make it ideal for various applications. Its features, such as its low threshold and high image-rejection ratio, make it a popular choice for audio amplifiers, power supplies and converters. Its compatibility with other components makes it suitable for large and small circuit systems, as well as applications in motor controls and load controllers.
The specific data is subject to PDF, and the above content is for reference
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