FQP19N20

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	150 mOhm @ 9.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	19.4A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>FQP19N20 is a field-effect transistor (FET) designed for circuits requiring high input impedance and low noise characteristics. In this article, we will discuss its application field and working principle.</p><p>FQP19N20 is a type of N-channel enhancement-mode power metal–oxide–semiconductor field-effect transistor (MOSFET). It is mainly used in electronic amplifier and audio amplifier circuits. This device features low noise, high input impedance and high gate capacitance which gives it excellent low-frequency amplifier performance. The relatively low gate charge makes it suitable for operation in circuits operating at high frequencies. It also offers excellent thermal stability, making it suitable for use in high-temperature applications.</p><p>FQP19N20 operates by using a metal–oxide–semiconductor (MOS) structure. The metal oxide layer formed between the source and drain terminals acts as a dielectric barrier that controls the movement of electrons. A voltage applied to the gate terminal creates an electric field that penetrates the oxide layer and modulates the current passing through the device. When the voltage applied to the gate terminal is increased, the current passing through the device is also increased. As the voltage is decreased, the current passing through the device is reduced. This operating principle is known as “field-effect” control.</p><p>FQP19N20 has two main applications. First, it is a useful amplifier in low-noise audio circuits. Second, it is used in high-voltage power conversion circuits. The device has a low threshold voltage, which makes it capable of working with higher voltage and higher power supplies. In power conversion circuits, the device is used to control current flow and voltage levels in order to obtain the desired circuit parameters.</p><p>The features of FQP19N20 make it ideal for many applications. Its low noise, high input impedance and high gate capacitance allow it to be used in low-noise audio circuits with excellent performance. The low gate charge, and good thermal stability make it suitable for use in high-frequency and high-temperature applications. Its useful in power conversion circuits as it can control current flow and voltage levels.</p><p>In conclusion, FQP19N20 is a useful, low-noise N-channel enhancement-mode power MOSFET. It is mainly used in audio amplifier circuits and high-voltage power conversion circuits. Its low noise, high input impedance and high gate capacitance make it ideal for low-noise audio applications. Its low gate charge and good thermal stability make it suitable for use in high-frequency and high-temperature applications.</p>

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