IXFP90N20X3

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The IXFP90N20X3 is an N-channel enhancement mode vertical D-mode ultra-fast insulated-gate field-effect power transistors (IGFETs), which is designed to deliver the best performance in various high current and voltage applications, such as motor control, low conversion loss power switches, general-purpose inverters, power-factor controllers, and high-voltage switching. As a vertical power MOSFET, the IXFP90N20X3 is based on the dual-surface trench technology and offers outstanding device characteristics and extremely robust performance. The superior device design also makes the IXFP90N20X3 suitable for use in high density applications.

The IXFP90N20X3 is designed to provide minimal gate charge, low gate-drain capacitance, and low on-state resistance for superior performance. Additionally, IXFP90N20X3 offers a wide range of enhanced gate and drain breakdown voltage ratings up to 300V and a maximum continuous drain current of 90A. With these specifications, the IXFP90N20X3 is ideal for applications that require high voltage and current such as inverters, motor controls and power switches.

The working principle of the IXFP90N20X3 is best described as a depletion-mode insulated-gate field-effect power transistor. This type of transistor relies on the application of an external gate voltage to become conductive. When an appropriate voltage is applied to the gate, it creates a depletion layer that prevents current flow between the source and the gate. This creates a depletion-mode transistor which is the basis of the IXFP90N20X3.

The IXFP90N20X3 features an industry-leading power MOSFET with improved switching speed and low operations losses. It also offers superior thermal performance and is optimized for use in high voltage and current applications. Additionally, IXFP90N20X3 has an SOA package specifically designed to handle the high maximum drain current and voltage levels of the IXFP90N20X3. This combination of features makes the IXFP90N20X3 the ideal choice for high current and voltage applications, such as inverters, motor control and power switches.

The IXFP90N20X3 device is designed to handle high voltage and load requirements and offers an impressive balance of performance and efficiency. It is built on an advanced vertical MOSFET technology, allowing the IXFP90N20X3 to switch at higher frequencies making it suitable for applications in motor control, power conversion, or large inverters. Furthermore, IXFP90N20X3 offers fast switching speeds, low drain-source capacitance and exceptional on-state resistance, making it well suited for a wide range of applications.

In conclusion, the IXFP90N20X3 is a vertical D-mode ultra-fast insulated-gate field-effect power transistors (IGFET). It has been designed to deliver the best performance in various high current and voltage applications, such as motor control, low conversion loss power switches, general-purpose inverters, power-factor controllers, and high-voltage switching. The IXFP90N20X3 features an industry-leading power MOSFET with improved switching speed and low operations losses and SOA package specifically designed to handle the high maximum drain current and voltage levels of the IXFP90N20X3. Additionally, the IXFP90N20X3 offers fast switching speeds, low drain-source capacitance and exceptional on-state resistance making it ideal for high voltage and current applications.

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