Cap alum 6300uf 60v screw - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
HUFA76429S3ST-N D	HUFA76429S3ST	ON Semiconductor	View more Series: UltraFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22 mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
NTD5413NT4G-ND	NTD5413NT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Power Dissipation (Max): 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
2N7000BU_T-ND	2N7000BU_T	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 400mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Base Part Number: 2N7000	1000 Order	1+: $0
1727-1133-ND	PSMN3R9-60PSQ	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power Dissipation (Max): 263W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	4986 Order	1+: $1.5813 50+: $1.2742 100+: $1.1468 500+: $0.892 1000+: $0.739
SQ4470EY-T1_GE3 -ND	SQ4470EY-T1_GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V Power Dissipation (Max): 7.1W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $0.4382
SSM3K318TLFCT-N D	SSM3K318T,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 107 mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 30V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
IRFZ44PBF-ND	IRFZ44PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2813 Order	--
497-4343-5-ND	STF40NF06	STMicroelectronics	View more Series: STripFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1454 Order	--
IRFB3206GPBF-ND	IRFB3206GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	65 Order	--
TK100E06N1S1X-N D	TK100E06N1,S1X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 30V Power Dissipation (Max): 255W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	119 Order	1+: $1.8081 50+: $1.4598 100+: $1.3139 500+: $1.0219 1000+: $0.8467
497-3154-2-ND	STD12NF06T4	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.2554
497-2779-5-ND	STP60NF06	STMicroelectronics	View more Series: STripFET II Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
497-4340-5-ND	STF20NF06	STMicroelectronics	View more Series: STripFET II Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 28W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	--
STD30NE06LT4-ND	STD30NE06LT4	STMicroelectronics	View more Series: STripFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Power Dissipation (Max): 55W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
NTP27N06OS-ND	NTP27N06	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IRF1010EZLPBF-N D	IRF1010EZLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2810pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
FQPF13N06-ND	FQPF13N06	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 135 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Power Dissipation (Max): 24W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	--
HUF76437S3ST-ND	HUF76437S3ST	ON Semiconductor	View more Series: UltraFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 71A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V Power Dissipation (Max): 155W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
NTBV75N06T4G-ND	NTBV75N06T4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	800+: $1.5364
NTB30N06G-ND	NTB30N06G	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 88.2W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
FDP040N06-ND	FDP040N06	ON Semiconductor	View more Series: PowerTrench Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V Power Dissipation (Max): 231W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
NVB5426NT4G-ND	NVB5426NT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Power Dissipation (Max): 215W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
DMT6002LPS-13-N D	DMT6002LPS-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6555pF @ 30V Power Dissipation (Max): 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	1000 Order	2500+: $0.5379
CEDM7002AETR-ND	CEDM7002AE TR	Central Semiconductor Corp	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 100mW (Ta) Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-883L Package / Case: SC-101, SOT-883	144000 Order	--
IRFP3306PBF-ND	IRFP3306PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Power Dissipation (Max): 220W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	8797 Order	--
RD3L140SPTL1TR- ND	RD3L140SPTL1	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 84 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Power Dissipation (Max): 20W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	5000 Order	2500+: $0.4358
IRF1010ESTRLPBF TR-ND	IRF1010ESTRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	22400 Order	--
TSM340N06CHX0G- ND	TSM340N06CH X0G	Taiwan Semiconductor Corporation	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V Power Dissipation (Max): 66W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPak	3307 Order	1+: $0.4347 10+: $0.3654 100+: $0.2739 500+: $0.2008 1000+: $0.1552
ZXMP6A16KTR-ND	ZXMP6A16KTC	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Power Dissipation (Max): 2.11W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
1727-2596-2-ND	PSMN5R6-60YLX	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 66.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5026pF @ 25V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.2593
IRFB4215PBF-ND	IRFB4215PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 54A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V Power Dissipation (Max): 270W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
HUFA76413P3-ND	HUFA76413P3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 49 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
1727-1096-2-ND	BUK962R8-60E,11 8	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 25V Power Dissipation (Max): 324W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	4800 Order	800+: $0.91
1727-5437-ND	PSMN3R0-60ES,12 7	Nexperia USA Inc.	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8079pF @ 30V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	4539 Order	1+: $1.5498 50+: $1.2508 100+: $1.1258 500+: $0.8756 1000+: $0.7255
1727-1812-2-ND	BUK9Y59-60E,115	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 16.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1500+: $0.151
IPI040N06N3GXKS A1-ND	IPI040N06N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 90A Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V Power Dissipation (Max): 188W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $1.1529 10+: $1.0395 100+: $0.8354 500+: $0.6498 1000+: $0.5384
HUF76407P3-ND	HUF76407P3	ON Semiconductor	View more Series: UltraFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
HUFA76432S3ST-N D	HUFA76432S3ST	ON Semiconductor	View more Series: UltraFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 59A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 25V Power Dissipation (Max): 130W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IPB050N06NGATMA 1TR-ND	IPB050N06NGATMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 270A Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
DMNH6042SK3Q-13 DITR-ND	DMNH6042SK3Q-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	1000 Order	2500+: $0.2364

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