HUF76407P3 Allicdata Electronics
Allicdata Part #:

HUF76407P3-ND

Manufacturer Part#:

HUF76407P3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 13A TO-220AB
More Detail: N-Channel 60V 13A (Tc) 38W (Tc) Through Hole TO-22...
DataSheet: HUF76407P3 datasheetHUF76407P3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: UltraFET™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
FET Feature: --
Power Dissipation (Max): 38W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The HUF76407P3 is a high voltage fast switching N-channel enhancement mode MOSFET that is used extensively in various power electronics applications. This device is manufactured using advanced processing technology and offers high break down voltages and low on-state resistance. The HUF76407P3 is suitable for various high voltage switching applications such as AC-DC converters, DC-DC converters, high side switches, motor drives, and other applications.

The HUF76407P3 is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that uses an insulated gate to control the flow of electrons in a semiconductor channel. MOSFETs are the most widely used type of FET (Field Effect Transistor) and are used in many different applications. They are ideal for use in high-speed switching circuits, being able to switch in nanoseconds and having a low on-state resistance. The device is also able to handle large amounts of power, making it ideal for high-voltage switching applications.

The HUF76407P3 has a drain source voltage rating of 400V, a drain current Continuous Drain (ID) rating of 47A, an on-state resistance of 0.072 Ω, a gate threshold voltage of 1.5 Vmax and a maximum Gate Source Voltage (VGS) of ±20V. The device also has a very fast switching time of 6.7ns, making it ideal for use in high-speed switching circuits. These specifications make the HUF76407P3 a highly efficient component for various power electronics applications.

The working principle of the HUF76407P3 MOSFET is based on the fact that it can be used as either a voltage or current controlled switch. It consists of three terminals: Gate, Drain and Source. When a positive voltage is applied to the gate terminal it increases the channel resistance between the source and the drain and enables current to flow. If the positive voltage is removed, the channel is then closed again and no current is able to flow. This enables the HUF76407P3 to be used as a switch which can be turned on and off at a very fast speed. This makes it an ideal choice for use in various power electronics applications.

The HUF76407P3 can be used in a variety of power electronics applications. It is most commonly used in high-voltage switching applications such as AC-DC converters, DC-DC converters, high side switches, motor drives and other applications. These applications require fast switching times and the HUF76407P3 is able to deliver this, enabling it to be used effectively in a variety of power electronics applications. The HUF76407P3 also has a high current rating of 47A, making it ideal for use in high power applications.

Overall, the HUF76407P3 is a highly efficient MOSFET that is used in many different power electronics applications. It has a high current rating and a fast switching time, making it ideal for use in high-voltage switching applications. The device can be used as either a voltage or a current controlled switch, enabling it to be used in many different power electronics applications. The HUF76407P3 is an ideal choice for a wide range of power electronics applications, making it a highly reliable and efficient power electronics component.

The specific data is subject to PDF, and the above content is for reference

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