Allicdata Part #: | HUF76437S3ST-ND |
Manufacturer Part#: |
HUF76437S3ST |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 71A D2PAK |
More Detail: | N-Channel 60V 71A (Tc) 155W (Tc) Surface Mount D²P... |
DataSheet: | HUF76437S3ST Datasheet/PDF |
Quantity: | 1000 |
Series: | UltraFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 71A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 71A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 2230pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 155W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HUF76437S3ST is a High Performance N-Channel PowerTrench MOSFET which is produced by Fairchild Semiconductor. It is highly suitable for any gate-driven applications such as DC-to-DC converters and power switching in portable handheld products. The device features reduced on-resistance which ensures low gate and power losses. It provides a low gate threshold voltage which generates superior gains and lowers losses in switched-mode power supplies. The low on-state resistance of the device yields low conduction losses.
HUF76437S3ST is a MOSFET which consists of three terminals namely gate, drain and source. It is a voltage-controlled device which is operated by applying voltage to its gate terminal. This voltage causes electrons to move across the heavily doped PN junction and thus changes the resistance of the device. It works on the principle of majority-carrier conduction where when a voltage bias is applied across the gate and the source terminals, it arranges the majority carriers in the channel which makes the channel more conductive and allows current to flow from drain to the source.
The HUF76437S3ST is suitable for a variety of applications such as DC-to-DC converters, gate drivers for IGBTs and MOSFETs, audio amplifiers, power switching and brush DC motor drivers. It is also used in primary side of a synchronous buck or boost converter, or in any gate drive circuits in an isolated DC-DC converter.
The features of HUF76437S3ST includes low on-state resistance, fast switching capability, short circuit protection and temperature-independent switching behavior. It can handle high dV/dt which ensures good commutation performance. It has ESD-protection which prevents any damage due to electrostatic discharge. This device features low gate turn-on and turn-off times which increases efficiency. It also provides a thermal shutdown protection which limits the junction temperature to protect the device from overheating. It is also RoHS compliant which makes it suitable for green applications.
HUF76437S3ST offers superior performance in many applications. It is designed for higher switching frequencies, better thermal performance and robustness. It has a drain to source voltage of 100 volts and a drain to source current of 40A. It can be used in any design which requires efficient power management in portable systems with medium efficiency. It is available in TO-220FAB package which is suitable for surface mount applications. This helps in reducing the number of components and cost associated with them.
The specific data is subject to PDF, and the above content is for reference
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