PSMN3R0-60ES,127

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The PSMN3R0-60ES,127 is a silicon n-channel power MOSFET, which belongs to the Single category of Field Effect Transistors (FETs) and Metal Oxide Semiconductor FETs (MOSFETs) variants.

The device is designed to provide comfortable to use with improved performance in both high and low voltage applications. It has a maximum drain-source voltage of 60 V, a drain current range of 0.79 A, and a maximum continuous drain current of 0.09 A. It features a low threshold voltage of 1.8 V and a low on-resistance of 30 mΩ.

The device is a great choice for various applications, including but not limited to, power management, industrial systems, audio and video systems, computers, and medical equipment. Additionally, it is also suitable for various automotive applications including air conditioners, interior lighting, and central locking systems.

The PSMN3R0-60ES,127 utilizes a metal oxide semiconductor field effect transistor (MOSFET) structure that consists of a semiconductor body connected between the drain and source electrodes. A thin oxide layer forms the gate oxide interface, which acts as an insulator between the gate and the body of the device. It uses the minority carrier injection transistor (Mint) technology and works on the principle of field effect transistor action.

It works by flowing a current in the gate of the device, which creates an electric field within the MOSFET’s oxide layer. This electric field increases the probability of electrons passing along the oxide layer and allows some to drift through the oxide and into the channel connecting the drain and source of the device. This tunable electric field allows for precise control of the current passing between the drain and source, providing for efficient power management.

The PSMN3R0-60ES,127 is a great choice for those who are looking for improved performance and flexible applications. It offers the combined benefits of design efficiency, low on-resistance, and reduced operating and stand-by power consumption that are often required for demanding applications. It also provides protection against short-circuit, burnout and electrostatic discharges. Its reliable performance, combined with its efficient power management, makes it an ideal choice for a wide range of applications.

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