| Allicdata Part #: | HUFA76432S3ST-ND |
| Manufacturer Part#: |
HUFA76432S3ST |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 59A D2PAK |
| More Detail: | N-Channel 60V 59A (Tc) 130W (Tc) Surface Mount D²P... |
| DataSheet: |  HUFA76432S3ST Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | UltraFET™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 59A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| Vgs (Max): | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1765pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 130W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
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HUFA76432S3ST: Application Field and Working Principle
The HUFA76432S3ST is a semiconductor device, specifically intended for use in amplifiers and other applications. It is a N-channel n-type MOSFET, meaning that it is made of a metal and an insulator, an N-channel insulated-gate, and an N-type semiconductor. It has a very high drain-source breakdown voltage, as well as a high amount of conductivity in both N-channel and P-channel directions, making it ideal for many applications.
The HUFA76432S3ST has a several key features that make it a great option for use in amplifiers. First and foremost, the HUFA76432S3ST can be used in both linear and nonlinear applications, making it a versatile solution. Additionally, the HUFA76432S3ST has a wide range of analyzability, meaning that the frequencies generated by the device can be easily identified. Finally, the HUFA76432S3ST has an average power dissipation of 1000mW, with a maximum of 1.3W, making it suitable for a wide range of power requirements.
The working principle of the HUFA76432S3ST is fairly simple. To understand it, we must first look at how MOSFETs work in general. MOSFETs are devices that create a voltage difference across a conducting pathway, which allows for the generation of electrical currents. The HUFA76432S3ST works in a similar way. It has two parts, the gate and the source. Applying a voltage to the gate attracts the electrons to the source, allowing for the flow of current.
In the case of the HUFA76432S3ST, the voltage difference is obtained by passing a current through the gate at a steady pace. Doing so causes an electrical field to be generated around the device, which will then induce a current in the N-channel of the device. This current is then passed through the P-channel, which allows it to be applied on the other side of the device and create the voltage drop. The voltage drop created by the HUFA76432S3ST then allows for the generation of electrical currents.
Overall, the HUFA76432S3ST is a versatile device, suitable for use in many different types of applications. It can be used for both linear and nonlinear applications and offers great analyzability. The high drain-source breakdown voltage and the high conductivity in both N-channel and P-channel directions make it ideal for many types of amplifier designs. Additionally, the working principle of the device is fairly simple and straightforward, making it easy to understand and implement.
The HUFA76432S3ST is a semiconductor device, specifically intended for use in amplifiers and other applications. It is a N-channel n-type MOSFET, meaning that it is made of a metal and an insulator, an N-channel insulated-gate, and an N-type semiconductor. It has a very high drain-source breakdown voltage, as well as a high amount of conductivity in both N-channel and P-channel directions, making it ideal for many applications.
The HUFA76432S3ST has a several key features that make it a great option for use in amplifiers. First and foremost, the HUFA76432S3ST can be used in both linear and nonlinear applications, making it a versatile solution. Additionally, the HUFA76432S3ST has a wide range of analyzability, meaning that the frequencies generated by the device can be easily identified. Finally, the HUFA76432S3ST has an average power dissipation of 1000mW, with a maximum of 1.3W, making it suitable for a wide range of power requirements.
The working principle of the HUFA76432S3ST is fairly simple. To understand it, we must first look at how MOSFETs work in general. MOSFETs are devices that create a voltage difference across a conducting pathway, which allows for the generation of electrical currents. The HUFA76432S3ST works in a similar way. It has two parts, the gate and the source. Applying a voltage to the gate attracts the electrons to the source, allowing for the flow of current.
In the case of the HUFA76432S3ST, the voltage difference is obtained by passing a current through the gate at a steady pace. Doing so causes an electrical field to be generated around the device, which will then induce a current in the N-channel of the device. This current is then passed through the P-channel, which allows it to be applied on the other side of the device and create the voltage drop. The voltage drop created by the HUFA76432S3ST then allows for the generation of electrical currents.
Overall, the HUFA76432S3ST is a versatile device, suitable for use in many different types of applications. It can be used for both linear and nonlinear applications and offers great analyzability. The high drain-source breakdown voltage and the high conductivity in both N-channel and P-channel directions make it ideal for many types of amplifier designs. Additionally, the working principle of the device is fairly simple and straightforward, making it easy to understand and implement.
The specific data is subject to PDF, and the above content is for reference
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