HUFA76429S3ST

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HUFA76429S3ST (hereinafter referred to as H7641) is a field-effect transistor (FET) designed for radio frequency (RF) applications. Its small footprint and low-noise characteristics make it an ideal choice for use in a variety of devices operating at frequencies above 1 GHz.

H7641 utilizes a number of technologies to improve its performance. The transistor is built using a highly reliable, high-performance silicon process. The FET is specifically designed for extremely low gate-source capacitance and dynamic resistance, which contribute to low-noise characteristics and high-frequency performance. The device also utilizes an on-chip protective edge which prevents large junction temperatures and protects the transistor from damage.

The FET incorporates an N-channel depletion mode MOSFET process which operates under both analog and digital waveforms. It features a low drain-source on resistance (RDS(on)) of 0.4 watts and a very low gate-source capacitance of 0.80 pF. Additionally, the device is designed to operate at frequencies up to 8 GHz with maximum power dissipation of 1.4 watts.

The H7641 has a wide range of applications, from amplifying signals in radio transmitters to powering small motors. It can be used in mobile phones, satellite communications, and a range of other consumer or industrial applications. Additionally, the device is well suited for use in RF amplifiers, such as power amplifiers, low-noise amplifiers, and transmitter amplifiers.

The working principle behind the H7641 is the same as that of any other field effect transistor (FET). It operates as a voltage-controlled switch. Voltage applied to the gate of the FET varies its conductivity, enabling it to be used as an amplifier or switch. When the gate of the device is at zero volts, very little current flows between the source and drain. As the gate voltage is increased, a conduction path is opened between the source and drain, which increases the current flow.

The H7641 is a versatile FET that offers excellent performance at high frequencies, making it an excellent choice for a wide range of RF applications. Its small footprint, robust construction, and low-noise characteristics make it an attractive option for many applications, particularly in mobile phones and satellite communications. With its high frequency performance, low capacitance, and low-noise characteristics, the H7641 will continue to be a popular choice for RF applications in both consumer and industrial products.

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