Crystal 16.0mhz aec-q200 - Allicdata Electronics

Related Categories

1 2 3 4 5 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
RJK005N03FRAT14 6TR-ND	RJK005N03FRAT14 6	ROHM Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 580 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Power Dissipation (Max): 200mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMT3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.058
RTL035N03FRATR- ND	RTL035N03FRATR	ROHM Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 56 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	6000 Order	3000+: $0.0944
RSJ400N06FRATLT R-ND	RSJ400N06FRATL	ROHM Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V Power Dissipation (Max): 50W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	1000 Order	1000+: $0.5253
RSJ250P10FRATLT R-ND	RSJ250P10FRATL	ROHM Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 63 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8000F @ 25V Power Dissipation (Max): 50W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	1000 Order	1000+: $0.5536
STD40P8F6AG-ND	STD40P8F6AG	STMicroelectronics	View more Series: Automotive, AEC-Q101 Part Status: Active	1000 Order	2500+: $0.4463
SQS460ENW-T1_GE 3TR-ND	SQS460ENW-T1_GE 3	Vishay Siliconix	View more Series: * Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power Dissipation (Max): 39W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8W Package / Case: PowerPAK 1212-8W	1000 Order	3000+: $0.2458
1727-1063-2-ND	BUK964R7-80E,11 8	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V	1000 Order	1+: $0.99
2N7002TQ-7-FDIT R-ND	2N7002TQ-7-F	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	3000 Order	3000+: $0.0543
SQD40030E_GE3TR -ND	SQD40030E_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Drive Voltage (Max Rds On, Min Rds On): 10V Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.4747
BSP75GQTA-ND	BSP75GQTA	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 550 mOhm @ 700mA, 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1000+: $0.4158
497-10086-5-ND	STW27NM60ND	STMicroelectronics	View more Series: Automotive, AEC-Q101, FDmesh II Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Vgs (Max): 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $0
BSP75GQTC-ND	BSP75GQTC	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 550 mOhm @ 700mA, 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	4000+: $0.3881
STB25NF06AG-ND	STB25NF06AG	STMicroelectronics	View more Series: Automotive, AEC-Q101, STripFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Power Dissipation (Max): 50W (Tc) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	2000+: $0.3481
IPD90N04S405ATM A1TR-ND	IPD90N04S405ATM A1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 86A, 10V Vgs(th) (Max) @ Id: 4V @ 30A Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2960pF @ 25V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SQJA72EP-T1_GE3 TR-ND	SQJA72EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V Power Dissipation (Max): 55W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.3753
1727-5511-2-ND	BUK6228-55C,118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.2nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	10000+: $0.1822
NVMFS5C450NAFT1 G-ND	NVMFS5C450NAFT1 G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 65A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1500+: $0.2828
568-8212-2-ND	BUK98150-55A,13 5	NXP USA Inc	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 137 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V Power Dissipation (Max): 8W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
1727-7242-ND	BUK7E2R3-40E,12 7	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V Power Dissipation (Max): 293W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	300 Order	1+: $1.6884 50+: $1.3621 100+: $1.2259 500+: $0.9534 1000+: $0.79
FDB86566-F085TR -ND	FDB86566-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6655pF @ 30V Power Dissipation (Max): 176W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPD90P03P4L04AT MA1TR-ND	IPD90P03P4L04AT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 2V @ 253A Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): +5V, -16V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Power Dissipation (Max): 137W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
SQ2308CES-T1_GE 3TR-ND	SQ2308CES-T1_GE 3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V Power Dissipation (Max): 2W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	12000 Order	--
FDB075N15A-F085 TR-ND	FDB075N15A-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5595pF @ 75V Power Dissipation (Max): 333W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
1727-7188-2-ND	BUK9606-55A,118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	4000 Order	800+: $0.6934
FDMS9410L-F085T R-ND	FDMS9410L-F085	ON Semiconductor	View more Series: Automotive, AEC-Q101, PowerTrench Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 20V Power Dissipation (Max): 75W (Tj) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	1000 Order	3000+: $0.358
497-13976-5-ND	STP80N6F6	STMicroelectronics	View more Series: Automotive, AEC-Q101, DeepGATE, STripFET VI Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V Power Dissipation (Max): 120W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	655 Order	1+: $1.1907 10+: $1.0559 100+: $0.8342 500+: $0.647
1727-2570-2-ND	BUK9M120-100EX	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 119 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.05V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 882pF @ 25V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	1000 Order	1500+: $0.1522
STD14NM50NAG-ND	STD14NM50NAG	STMicroelectronics	View more Series: Automotive, AEC-Q101, MDmesh II Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V Power Dissipation (Max): 90W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.5379
IPD50N06S4L08AT MA2-ND	IPD50N06S4L08AT MA2	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.2V @ 35A Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: IPD50N06	2500 Order	1+: $29.55
NVMFS6B14NLT3G- ND	NVMFS6B14NLT3G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	5000+: $0.2906
497-15470-2-ND	STH245N75F3-6	STMicroelectronics	View more Series: Automotive, AEC-Q101, STripFET F3 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	1+: $0
IPP65R660CFDAAK SA1-ND	IPP65R660CFDAAK SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, CoolMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 660 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 100V Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
IPB65R310CFDAAT MA1-ND	IPB65R310CFDAAT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 440A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V Power Dissipation (Max): 104.2W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $0.987
SQJ416EP-T1_GE3 TR-ND	SQJ416EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	3000+: $0.2458
1727-7176-2-ND	BUK7C10-75AITE, 118	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101, TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: Current Sensing Power Dissipation (Max): 272W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	1+: $0
DMG1013TQ-7-ND	DMG1013TQ-7	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 700 mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4.5V Vgs (Max): 6V Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Power Dissipation (Max): 270mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	1000 Order	--
DMNH6042SPD-13- ND	DMNH6042SPD-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 5.7A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Power Dissipation (Max): 1.2W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	1000 Order	2500+: $0.2353
DMTH10H015LK3-1 3-ND	DMTH10H015LK3-1 3	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 52.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V Power Dissipation (Max): 2.1W (Ta) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-4L Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD	1000 Order	2500+: $0.2536
NVMFS5113PLWFT1 G-ND	NVMFS5113PLWFT1 G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 10A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1500+: $0.7202
NVMFS5C426NWFAF T1G-ND	NVMFS5C426NWFAF T1G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	1000 Order	1500+: $0.5586

1 2 3 4 5 >

Hot Searches: crystal 16.0mhz aec-q200 crystal 20.0mhz aec-q200 crystal 24.0mhz aec-q200 crystal 25.0mhz aec-q200 crystal 26.0mhz aec-q200 crystal 27.0mhz aec-q200 crystal 12.0mhz aec-q200 aec-q200 battery management crystal 16.0mhz 10pf smd aec-q20 crystal 16.0mhz crystal 16.0mhz 20pf smd crystal 16.0mhz 10pf smd crystal 16.0mhz 20pf crystal 16.0mhz 30pf crystal 16.0mhz 16pf smd crystal 14.3180mhz aec-q crystal 16.3840mhz aec-q crystal 14.318.0mhz aec- crystal 24.5760mhz 10pf smd aec- crystal 24.5460mhz 10pf smd aec-

Search Result:crystal 16.0mhz aec-q200

Related Categories