STB25NF06AG Allicdata Electronics
Allicdata Part #:

STB25NF06AG-ND

Manufacturer Part#:

STB25NF06AG

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 16A D2PAK
More Detail: N-Channel 60V 19A (Tc) 50W (Tc) Surface Mount D2PA...
DataSheet: STB25NF06AG datasheetSTB25NF06AG Datasheet/PDF
Quantity: 1000
2000 +: $ 0.34811
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Vgs (Max): --
Vgs(th) (Max) @ Id: --
Series: Automotive, AEC-Q101, STripFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STB25NF06AG is a N-channel field-effect transistor (MOSFET) that is designed to provide high power and reliable performance in electronic applications. The STB25NF06AG features a compact and robust construction that maximizes its output performance, making it ideal for automotive, consumer, industrial, and telecommunications applications. The STB25NF06AG transistor is manufactured using proprietary process technologies developed by STMicroelectronics.

Application Field

The STB25NF06AG transistor is an ideal device for automotive, consumer, industrial, and telecommunications applications that require high currents, efficiency and reliability. In these types of applications, the STB25NF06AG transistor is used to provide switching and control functions in various applications such as motor drives, power switches, rectifiers, and high-voltage DC-DC converters. The STB25NF06AG transistor is also suitable for use in gate drive and low-frequency amplifiers.

Working Principle

The STB25NF06AG is a MOSFET type transistor that uses the channel between the source and the drain as its conduction path. It is designed to switch high currents with a small forward voltage drop, making it ideal for applications that require high efficiency and low power consumption. The STB25NF06AG transistor is equipped with a gate-drain structure that provides an excellent immunity to transient voltages, and its gate-source capacitance is designed to reduce switching losses.

The STB25NF06AG transistor is capable of operating at high frequencies and is capable of handling high voltage loads of up to 60V. The low on-state resistance of the STB25NF06AG transistor ensures efficient conduction of signals and high switching speeds. Its high output is further increased by its double-diffused structure, which also makes the STB25NF06AG transistor highly thermally stable.

The unique feature of the STB25NF06AG transistor is its fast-recovery charge-balance transistors that enable it to quickly switch from high to low currents with minimal power dissipation. As the STB25NF06AG transistor switches its current quickly, it is ideal for switching frequencies up to 200MHz.

In summary, the STB25NF06AG is an ideal N-channel MOSFET transistor for automotive, consumer, industrial and telecommunications applications. Its robust construction and high power output allows it to work efficiently and reliably in a variety of applications. Its immunity to transient voltages, high switching frequencies and fast-recovery charge-balance transistors make it an ideal device for applications that require high performance and reliable operation.

The specific data is subject to PDF, and the above content is for reference

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